Session information

Poster presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[13p-PB3-1~2] 15.7 Fundamentals of epitaxy

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB3 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:30 PM - 3:30 PM

[13p-PB3-1] Effect of Si doping on vertical growth rate in GaAs microchannel epitaxy

〇Yosuke Mizuno¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yuko Shiraki¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

1:30 PM - 3:30 PM

[13p-PB3-2] Thermal stability of α-(AlGa)₂O₃ grown by mist CVD

〇Mikio Takahashi¹, Takumi Hatakeyama¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the official guidebook which will be distributed at the venue.
The password will be sent to all JSAP members in March 2016.

Please log in with your participant account.
» Participant Log In

▲