Session information

Poster presentation

15 Crystal Engineering » 15.7 Fundamentals of epitaxy

[13p-PB3-1~2] 15.7 Fundamentals of epitaxy

Sun. Sep 13, 2015 1:30 PM - 3:30 PM PB3 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[13p-PB3-1] Effect of Si doping on vertical growth rate in GaAs microchannel epitaxy

〇Yosuke Mizuno¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Hiroyuki Takakura¹, Muneki Iwakawa¹, Yuko Shiraki¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (1.Meijo Univ.)

1:30 PM - 3:30 PM

[13p-PB3-2] Thermal stability of α-(AlGa)₂O₃ grown by mist CVD

〇Mikio Takahashi¹, Takumi Hatakeyama¹, Takeyoshi Onuma¹, Tomohiro Yamaguchi¹, Tohru Honda¹ (1.Kogakuin Univ.)

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