[14a-1B-1~11] 21.1 Joint Session K

Mon. Sep 14, 2015 9:00 AM - 12:00 PM 1B (133+134)

座長:牧野久雄(高知工科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[14a-1B-1] Air annealing treatment of ZnO layer grown by UHV sputtering(Ⅱ)

〇(M1)kazuki watanabe¹, matsuhisa kenji¹, sakuma daiki¹, hatori tsubasa¹, sinoda hiroyuki¹, mutukura nobuki¹ (1.Tokyo Denki Univ.)

9:15 AM - 9:30 AM

[14a-1B-2] Air annealing treatment of ZnO layer grown by UHV sputtering(Ⅲ)

〇(M1)TSUBASA HATORI¹, HIROKI SAKUMA¹, KENJI MATSUHISA¹, KAZUKI WATANABE¹, AI MIZUNO¹, HIROYUKI SHINODA¹, NOBUKI MUTSUKURA¹ (1.Tokyo Denki Univ.)

9:30 AM - 9:45 AM

△ [14a-1B-3] Electric properties of ZnO graphoepitaxial films

〇Tetsuya Kudoh¹, Takayoshi Oshima¹, Kazuki Ohashi¹, Kohei Yoshimatsu¹, Akira Ohtomo^1,2 (1.Tokyo Tech., 2.MCES)

9:45 AM - 10:00 AM

△ [14a-1B-4] Suppression of unstable nucleation in vanadium-doped ZnO thin films

〇Hiroshi Chiba¹, Akihiro Watanabe¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

10:00 AM - 10:15 AM

[14a-1B-5] Formation of multi-phase structure in ZnO thin films heavily doped with vanadium

〇Tomoyuki Kawashima¹, Akihiro Watanabe¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[14a-1B-6] Evaluation of S-doped ZnO thin films formed by mist-CVD

〇YOSHIHITO SATO¹, Kensuke Minami¹, Takuya Ishihara¹, Yoshihiro Naka^1,3, Shoji Nagaoka^2,3, Koji Sue¹, Yusui Nakamura^1,3 (1.Kumamoto Univ, 2.Kumamoto Industrial Research Institute, 3.Phoenics)

10:45 AM - 11:00 AM

[14a-1B-7] Nitrogen Doping into ZnO films using non-equilibrium atmospheric pressure plasma

〇Hironori Iwasaki¹, Yukinori Nose¹, Takeshi Yoshimura¹, Atushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.)

11:00 AM - 11:15 AM

[14a-1B-8] The excitation processes in atmospheric pressure N₂ plasma with the addition of small amount of O₂ and the formation of highly resistive ZnO films

〇(D)Yukinori Nose¹, Takuya Kiguchi¹, Takada Kenshi¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Tsuyoshi Uehara², Norifumi Fujimura¹ (1.Osaka Prefecture Univ., 2.Sekisui Chemical Co., LTD.)

11:15 AM - 11:30 AM

△ [14a-1B-9] Dependence of ZnO nanowires’ catalyst-free growth using UV-laser processing on the plane direction of sapphire substrates

〇(DC)Tetsuya Shimogaki¹, Masahiro Takahashi¹, Mitsuhiro Higashihata¹, Daisuke Nakamura¹, Hiroshi Ikenoue¹, Yoshiki Nakata², Tatsuo Okada¹ (1.Kyushu Univ., 2.Osaka Univ.)

11:30 AM - 11:45 AM

[14a-1B-10] Influence of Heat-treatment Temperature on NiO Growth on MgO by Sol−Gel Method

〇Yoshihiro Kokubun¹, Masato Koyanagi¹, Shinji Nakagomi¹ (1.Ishinomaki Senshu Univ.)

11:45 AM - 12:00 PM

[14a-1B-11] AP-MOCVD deposition of CuO thin films

〇Kazuki Fujiwara¹, Mizuki Teramura¹, Kentaro Taguch¹, Kai Taniguch¹, Hiroyasu Ishikawa^1,2 (1.Shibaura Inst., 2.SIT Center for Green Inovation)

Session information