Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[14a-1D-1~11] 15.4 III-V-group nitride crystals

Mon. Sep 14, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:竹内哲也(名城大),中野貴之(静岡大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (I): InN growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ.)

9:00 AM - 9:15 AM

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (II): In_xGa_1-xN(x~0.3) growth

〇Akio Yamamoto^1,2, Kazuki Kodama^1,2, Naoteru Shigekawa³, Takashi Matsuoka⁴, Masaaki Kuzuhara¹ (1.Univ. of Fukui, 2.JST-CREST, 3.Osaka City Univ., 4.Tohoku Univ)

9:15 AM - 9:30 AM

△ [14a-1D-3] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE

〇(M1)Ryohei Nonoda¹, Kanako Shojiki¹, Tomoyuki Tanikawa¹, Shigeyuki Kuboya¹, Ryuji Katayama¹, Takashi Matsuoka¹ (1.IMR, Tohoku Univ.)

9:30 AM - 9:45 AM

[14a-1D-4] Growth of High-Indium-Content InGaN on semipolar (1–101) GaN Stripe Crystals

〇Maki Kushimoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.Akasaki Research Center)

9:45 AM - 10:00 AM

[14a-1D-5] Growth of strain-compensated InGaN/AlN/AlGaN multiple quantum wells

〇(M2)shen lu¹, Daisuke Iida¹, Sota Hirahara¹, Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Science)

10:00 AM - 10:15 AM

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers

〇Daisuke Iida¹, Shen Lu¹, Sota Hirahara¹, Kazumasa Niwa², Satoshi Kamiyama², Kazuhiro Ohkawa¹ (1.Tokyo Univ. of Sci., 2.Meijo Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Yasushi Iyechika¹, Hideshi Takahashi¹, Yuusuke Sato¹ (1.Nuflare Technology)

10:45 AM - 11:00 AM

[14a-1D-8] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

〇Akira Tamura¹, Tetsuya Yamamoto¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.Akasaki Research Center)

11:00 AM - 11:15 AM

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

〇(M1)Tetsuya Yamamoto¹, Akira Tamura¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.ARC)

11:15 AM - 11:30 AM

[14a-1D-10] Barrier layer thickness dependence in GaInN/GaN superlattice characterized by in situ X-ray diffraction measurement

〇junya ohsumi¹, Koji Ishihara¹, Taiji Yamamoto¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

〇(M2)Daisuke Komori¹, Kaku Takarabe¹, Kenta Suzuki¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki iwaya¹, Takao Miyajima¹, Norikatu Koide¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.ARC, Nagoya Univ.)

Session information

[14a-1D-1~11] 15.4 III-V-group nitride crystals

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (I): InN growth

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (II): In_xGa_1-xN(x~0.3) growth

△ [14a-1D-3] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE

[14a-1D-4] Growth of High-Indium-Content InGaN on semipolar (1–101) GaN Stripe Crystals

[14a-1D-5] Growth of strain-compensated InGaN/AlN/AlGaN multiple quantum wells

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers

[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

[14a-1D-8] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

[14a-1D-10] Barrier layer thickness dependence in GaInN/GaN superlattice characterized by in situ X-ray diffraction measurement

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

Authentication

Session information

[14a-1D-1~11] 15.4 III-V-group nitride crystals

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH3 decomposition catalyst-assisted MOVPE (I): InN growth

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH3 decomposition catalyst-assisted MOVPE (II): InxGa1-xN(x~0.3) growth

△ [14a-1D-3] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar (000\overline{1}) p-type GaN grown by MOVPE

[14a-1D-4] Growth of High-Indium-Content InGaN on semipolar (1–101) GaN Stripe Crystals

[14a-1D-5] Growth of strain-compensated InGaN/AlN/AlGaN multiple quantum wells

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes bystrain-compensated AlN/AlGaN barriers

[14a-1D-7] InGaN/GaN MQW Growth on 200 mm Si Wafer by Fast Rotating Single-Wafer MOCVD

[14a-1D-8] InGaN/GaN multiple quantum well growth on (0001) GaN by raised pressure MOVPE

△ [14a-1D-9] Growth of InGaN well layer with an in-situ monitoring system

[14a-1D-10] Barrier layer thickness dependence in GaInN/GaN superlattice characterized by in situ X-ray diffraction measurement

△ [14a-1D-11] Carrier gas dependence of GaSb molar fraction in GaNSb

Authentication

[14a-1D-1] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (I): InN growth

[14a-1D-2] Low-temperature (~400 deg. C) growth of InN-based materials by NH₃ decomposition catalyst-assisted MOVPE (II): In_xGa_1-xN(x~0.3) growth

△ [14a-1D-6] Enhancement of light output power of amber light-emitting diodes by
strain-compensated AlN/AlGaN barriers