[14a-2B-1~10] 13.9 Optical properties and light-emitting devices

Mon. Sep 14, 2015 9:30 AM - 12:15 PM 2B (211-2)

座長:今北健二(神戸大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

△ [14a-2B-1] Observation of spin relaxation in Si doped GaAs grown by VGF method

〇shunsuke ohki¹, Masaki Asakawa¹, Tomoki Ishikawa¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

9:45 AM - 10:00 AM

[14a-2B-2] Temperature dependence of circularly polarized electro-luminescence induced by spin-current injection in InGaAs quantum dots

〇Yuto Akei¹, Yuzuru Nomura¹, Junichi Takayama¹, Takayuki Kiba², Takafumi Yamamura¹, Daiki Yamazaki¹, Agus Subagyo¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1.Hokkaido Univ., 2.Kitami Inst.)

10:00 AM - 10:15 AM

△ [14a-2B-3] Improved thermostability of luminescent Si composite microcrystallites by P doping

〇(B)Masayuki Suzuki¹, Keisuke Sato¹, Kenji Hirakuri¹ (1.Tokyo Denki Univ.)

10:15 AM - 10:30 AM

[14a-2B-4] Enhancement of emission efficiency of P-doped Si-nc using step excitation: Time sharing between photon emission and electric conduction

〇Masashi Ishii¹, Iain Crowe², Matthew Halsall², Andrew Knights³, Russell Gwilliam⁴, Bruce Hamilton² (1.NIMS, 2.Univ. Manchester, 3.McMaster Univ., 4.Univ. Surrey)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[14a-2B-5] Visible photoluminescence from Au/Ni/AlN:Eu/p-Si(111)/Au heterojunctions

〇(M1)Kazuya Iwade¹, Takumi Kodama¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

11:00 AM - 11:15 AM

[14a-2B-6] Preparation of Europium-doped cubic GaN grown on GaAs(100) by radio frequency MBE (2)

〇Shinji Yudate¹, yuki koyama¹, akira miyata¹, sho shirakata¹ (1.Ehime Univ.)

11:15 AM - 11:30 AM

[14a-2B-7] Luminescence properties of Eu-doped GaN and InGaN quantum wells

〇Junichi Takatsu¹, Shuhei Yamanaka¹, Masaaki Matsuda¹, Atsushi Koizumi¹, Takanori Kojima¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[14a-2B-8] Selective analyses of strong emission centers in GaN:Eu red LED: Charge capturing properties evaluated with site-selective PDES

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

11:45 AM - 12:00 PM

[14a-2B-9] Noise analyses of GaN:Eu red LED: A new application to measure charge capturing properties of emission centers

〇Masashi Ishii¹, Atsushi Koizumi², Yasufumi Fujiwara² (1.NIMS, 2.Osaka Univ.)

12:00 PM - 12:15 PM

[14a-2B-10] Photoluminescence from Eu³⁺ ions doped in ZnO:Ga and ZnGa₂O₄ films

〇Housei Akazawa¹, Hiroyuki Shinojima² (1.NTT DIC, 2.Kurume NCT)

Session information