Oral presentation

13 Semiconductors » 13.10 Compound solar cells

[14a-2M-1~11] 13.10 Compound solar cells

Mon. Sep 14, 2015 9:00 AM - 12:15 PM 2M (224-1(South))

座長:八木修平(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:30 AM

[14a-2M-1] [JSAP Best Review Paper Award Speech] Multiple carrier interactions in semiconductor nanostructures for high-efficiency solar cell applications

〇Yoshihiko Kanemitsu¹ (1.Kyoto Univ.)

9:30 AM - 9:45 AM

▼ [14a-2M-2] Correlation between Capping Ligands and Photovoltaic Properties in PbS Quantum Dot Solar Cells

〇(P)Jin Chang^1,4, Yuki Kuga¹, Taro Toyoda^1,4, Yuhei Ogomi^2,4, Shuzi Hayase^2,4, Kenji Katayama³, Qing Shen^1,4 (1.Univ. Electro-Commun., 2.Kyushu Inst. Tech., 3.Chuo Univ., 4.CREST JST)

9:45 AM - 10:00 AM

[14a-2M-3] Device simulation of thin film solar cell characteristics considering Fabry-Perot cavity effect

〇(M2)Mizuki Mori^1,2 (1.The Univ. of Tokyo, 2.RCAST)

10:00 AM - 10:15 AM

[14a-2M-4] Defect Levels in GaAs p⁺n Diodes Embedded with InAs Quantum Dot Layers

〇Shinichiro Sato^1,2, Kenneth Schmieder², Seth Hubbard³, David Forbes³, Jeffery Warner², Takeshi Ohshima¹, Robert Walters³ (1.JAEA QuBS, 2.NRL, 3.RIT)

10:15 AM - 10:30 AM

[14a-2M-5] Effect of Sequential Tunneling on Performance of Quantum-Dot Intermediate-Band Solar Cells

〇Katsuhisa Yoshida¹, Yoshitaka Okada¹, Nobuyuki Sano² (1.RCAST, The Univ. Tokyo, 2.Univ. Tsukuba)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[14a-2M-6] Ultra-fast Time Resolved Photo-carrier Transport Process in InAs/GaAs Quantum Dot Superlattice Solar Cell

〇Taizo Tanibuchi¹, Tmoyuki Kada¹, Shigeo Asahi¹, Takashi Kita¹ (1.Kobe Univ.)

11:00 AM - 11:15 AM

[14a-2M-7] Hot-carrier cooling process in InAs/GaAs quantum dot superlattices

〇Yukihiro Harada¹, Naofumi Kasamatsu¹, Daiki Watanabe¹, Takashi Kita¹ (1.Kobe Univ.)

11:15 AM - 11:30 AM

△ [14a-2M-8] Hot-carrier solar cells using InAs/GaAs quantum dot super lattices

〇Daiki Watanabe¹, Yukihiro Harada¹, Toshiyuki Kaizu¹, Kita Takashi¹ (1.Kobe Univ.)

11:30 AM - 11:45 AM

[14a-2M-9] Bias dependence of dot-in-well intermediate-band solar cell characteristics

〇(DC)Shigeo Asahi¹, Haruyuki Teranishi¹, Taizo Tanibuchi¹, Daiki Watanabe¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

11:45 AM - 12:00 PM

△ [14a-2M-10] Improvement of Carrier Collection Efficiency for Filed-Damped Quantum Dot Solar Cells

〇Yasushi Shoji¹, Katsuhisa Yoshida¹, Yoshitaka Okada¹ (1.RCAST, The Univ. of Tokyo)

12:00 PM - 12:15 PM

△ [14a-2M-11] Design Optimization for Two-Step Photon Absorption by Infrared Photocurrent Spectroscopy

〇Ryo Tamaki¹, Yasushi Shoji¹, Yoshitaka Okada¹ (1.RCAST, The Univ. of Tokyo)

Session information

[14a-2M-1~11] 13.10 Compound solar cells

[14a-2M-1] [JSAP Best Review Paper Award Speech] Multiple carrier interactions in semiconductor nanostructures for high-efficiency solar cell applications

▼ [14a-2M-2] Correlation between Capping Ligands and Photovoltaic Properties in PbS Quantum Dot Solar Cells

[14a-2M-3] Device simulation of thin film solar cell characteristics considering Fabry-Perot cavity effect

[14a-2M-4] Defect Levels in GaAs p⁺n Diodes Embedded with InAs Quantum Dot Layers

[14a-2M-5] Effect of Sequential Tunneling on Performance of Quantum-Dot Intermediate-Band Solar Cells

[14a-2M-6] Ultra-fast Time Resolved Photo-carrier Transport Process in InAs/GaAs Quantum Dot Superlattice Solar Cell

[14a-2M-7] Hot-carrier cooling process in InAs/GaAs quantum dot superlattices

△ [14a-2M-8] Hot-carrier solar cells using InAs/GaAs quantum dot super lattices

[14a-2M-9] Bias dependence of dot-in-well intermediate-band solar cell characteristics

△ [14a-2M-10] Improvement of Carrier Collection Efficiency for Filed-Damped Quantum Dot Solar Cells

△ [14a-2M-11] Design Optimization for Two-Step Photon Absorption by Infrared Photocurrent Spectroscopy

Authentication

Session information

[14a-2M-1~11] 13.10 Compound solar cells

[14a-2M-1] [JSAP Best Review Paper Award Speech] Multiple carrier interactions in semiconductor nanostructures for high-efficiency solar cell applications

▼ [14a-2M-2] Correlation between Capping Ligands and Photovoltaic Properties in PbS Quantum Dot Solar Cells

[14a-2M-3] Device simulation of thin film solar cell characteristics considering Fabry-Perot cavity effect

[14a-2M-4] Defect Levels in GaAs p+n Diodes Embedded with InAs Quantum Dot Layers

[14a-2M-5] Effect of Sequential Tunneling on Performance of Quantum-Dot Intermediate-Band Solar Cells

[14a-2M-6] Ultra-fast Time Resolved Photo-carrier Transport Process in InAs/GaAs Quantum Dot Superlattice Solar Cell

[14a-2M-7] Hot-carrier cooling process in InAs/GaAs quantum dot superlattices

△ [14a-2M-8] Hot-carrier solar cells using InAs/GaAs quantum dot super lattices

[14a-2M-9] Bias dependence of dot-in-well intermediate-band solar cell characteristics

△ [14a-2M-10] Improvement of Carrier Collection Efficiency for Filed-Damped Quantum Dot Solar Cells

△ [14a-2M-11] Design Optimization for Two-Step Photon Absorption by Infrared Photocurrent Spectroscopy

Authentication

[14a-2M-4] Defect Levels in GaAs p⁺n Diodes Embedded with InAs Quantum Dot Layers