[14a-2W-1~11] 15.3 III-V-group epitaxial crystals

Mon. Sep 14, 2015 9:15 AM - 12:15 PM 2W (234-2(North))

座長:間野高明(物材機構)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[14a-2W-1] Theoretical Calculation of Electronic States in Compound Alloy Semiconductors: Zincblende III-Vs

〇Ayaka Kishi¹, Masato Oda¹, Yuzo Shinozuka¹ (1.Wakayama Univ.)

9:30 AM - 9:45 AM

▲ [14a-2W-2] Arsenic pressure Dependence GaAsBi/GaAs Growth on (411)B and (100) GaAs Substrates by Molecular Beam Epitaxy

〇(D)Pallavi Patil¹, Satoshi Shimomura¹ (1.Ehime Univ.)

9:45 AM - 10:00 AM

[14a-2W-3] MBE growth of InAs on GaAs (775)B GaAs substrates

〇(M1)Yuki Sato¹, Satoshi Shimomura¹ (1.Ehime Univ.)

10:00 AM - 10:15 AM

[14a-2W-4] Crystal structure of lattice-matched low-temperature-grown In_xGa_1-xAs on InP substrate

〇(M1)Shingo Hirose¹, Kentaro Hirayama¹, Yoriko Tominaga¹, Yutaka Kadoya¹ (1.AdSM, Hiroshima Univ.)

10:15 AM - 10:30 AM

[14a-2W-5] Thermally induced crystallization of low-temperature-grown In_xGa_1-xAs

〇Yoriko Tominaga¹, Yutaka Kadoya¹, Hitoshi Morioka², Osamu Ueda³ (1.AdSM, Hiroshima Univ., 2.Bruker AXS K.K., 3.Kanazawa Inst. Tech.)

10:30 AM - 10:45 AM

[14a-2W-6] Measurement of temperature dependence of conduction electrons energy distribution in a semiconductor by Visible Light Photoemission Spectroscopy

〇(M1)XINYU DONG¹, Fumiaki Ichihashi¹, Takahiko Kawaguchi², Makoto Kuwahara¹, Takahiro Ito¹, Toru Ujihara¹ (1.Nagoya Univ., 2.VBL Nagoya Univ.)

Break (10:45 AM - 11:00 AM)

11:00 AM - 11:15 AM

[14a-2W-7] MOVPE growth of GaPN pseudo-alloy crystal by N-alternate-supply method using ammonia

〇Masashi Moriyama¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

11:15 AM - 11:30 AM

[14a-2W-8] The effect of the GaSb buffer layer on GaAs grown by MBE on Ge(111) substrates

〇Yasutomo Kajikawa¹, Yibo Son¹, Hisataka Hayase¹, Kenta Ushirogouchi¹, Masahiro Irie¹ (1.Shimane Univ.)

11:30 AM - 11:45 AM

[14a-2W-9] Annealing effect of InGaAsN/GaAsSb quantum wells diodes on InP substrates

〇Yuichi Kawamura¹, Ikuya Shishido¹ (1.Osaka Pref. Univ.)

11:45 AM - 12:00 PM

[14a-2W-10] MOMBE growth of strained InGaAsSb/InGaAsSb MQW structure on InP substrate

〇Manabu Mitsuhara¹, Yoshitaka Ohiso¹ (1.NTT Device Technology Labs)

12:00 PM - 12:15 PM

[14a-2W-11] Fabrication of (110)-oriented GaAs/AlGaAs quantum wells with high MBE growth rate for spin-controlled VCSELs

〇Satoshi Iba¹, Hidekazu Saito¹, Ken Watanabe², Yuzo Ohno², Shinji Yuasa¹ (1.AIST, 2.Univ. of Tsukuba)

Session information