[14a-PB6-1~7] 15.5 Group IV crystals and alloys

Mon. Sep 14, 2015 9:30 AM - 11:30 AM PB6 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

〇Koji Usuda¹, Takaishi Riichiro¹, Yoshiki Masahiko¹, Suda Kohei², Ogura Atsushi², Tomita Mitsuhiro¹ (1.Toshiba Corp., 2.Meiji Univ.)

9:30 AM - 11:30 AM

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge_1−xSn_x Epitaxial Layers

〇Takanori Asano^1,2, Shigehisa Shibayama^1,2, Wakana Takeuchi¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima^1,3 (1.Nagoya Univ., 2.JSPS, 3.ESI, Nagoya Univ.)

9:30 AM - 11:30 AM

[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-

〇Yasutaka Uchida¹, Tomoko Funayama¹, Yoshiaki Kogure¹, Wenchang Yeh² (1.Teikyo Univ., 2.Shimane Univ.)

9:30 AM - 11:30 AM

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

〇(M2)Joko Suwardy^1,2, Wipakorn Jevasuwan¹, Kaoru Toko², Takashi Suemasu², Naoki Fukata^1,2 (1.NIMS, 2.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[14a-PB6-5] STM observation of Ge on Au(111) surface

〇YOSUKE WAKABAYASHI¹, Kouhei Hashiguchi¹, Masao Kamiko², Kentaro Kyuno^1,3 (1.Shibaura Inst. of Tech., 2.Inst. of Industrial Sci., Univ. of Tokyo, 3.RCGI, SIT)

9:30 AM - 11:30 AM

[14a-PB6-6] Effect of Ge thickness on the crystallization of Ge thin films by Co-Sputtering of Au and Ge

〇satoshi yamamoto¹, takatoshi sugiyama¹, masao kamiko², kentaro kyuno^1,3 (1.shibaura Inst. of tech., 2.Inst. of Industrial Sci., 3.SIT RCGI)

9:30 AM - 11:30 AM

[14a-PB6-7] Fabrication of crystalline Ge thin films by cosputtering of Au and Ge: Effect of phosphorus doping

〇(M1)Tatuya Suzuki¹, Satoshi Takatorige¹, Takatoshi Sugiyama¹, Kimio Kamiko², Kentaro Kyuno^1,3 (1.Shibaura Inst. of Tech., 2.Inst. of Industrial Sci. ,Univ. of Tokyo, 3.RCGI, SIT)

Session information

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge_1−xSn_x Epitaxial Layers

[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

[14a-PB6-5] STM observation of Ge on Au(111) surface

[14a-PB6-6] Effect of Ge thickness on the crystallization of Ge thin films by Co-Sputtering of Au and Ge

[14a-PB6-7] Fabrication of crystalline Ge thin films by cosputtering of Au and Ge: Effect of phosphorus doping

Authentication

Session information

[14a-PB6-1~7] 15.5 Group IV crystals and alloys

[14a-PB6-1] Depth characterization of chemical states in GeSn thin film by HAXPES

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge1−xSnx Epitaxial Layers

[14a-PB6-3] Poly-crystallization of electrodeposited Ge film by Cu-induced crystallization II -Deposition condition dependence-

▲ [14a-PB6-4] Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization

[14a-PB6-5] STM observation of Ge on Au(111) surface

[14a-PB6-6] Effect of Ge thickness on the crystallization of Ge thin films by Co-Sputtering of Au and Ge

[14a-PB6-7] Fabrication of crystalline Ge thin films by cosputtering of Au and Ge: Effect of phosphorus doping

Authentication

[14a-PB6-2] Influence of Sn Content on Defect Formation in Ge_1−xSn_x Epitaxial Layers