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Symposium » Evaluation technology for oxide semiconductor

[14p-1B-1~9] Evaluation technology for oxide semiconductor

Mon. Sep 14, 2015 1:15 PM - 6:00 PM 1B (133+134)

座長:反保衆志(産総研),山本哲也(高知工科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:45 PM

[14p-1B-1] Atomic scale investigation of oxides using electron energy loss spectroscopy (EELS)

〇Teruyasu Mizoguchi¹ (1.IIS, Univ. Tokyo)

1:45 PM - 2:15 PM

[14p-1B-2] Characterization of Metal Oxide Thin Films by Hard X-ray Photoelectron Spectroscopy (HAXPES)

〇Keisuke Kobayashi^1,2,3 (1.JAEA, 2.HiSOR, 3.KUT)

2:15 PM - 2:45 PM

[14p-1B-3] Characterization of oxide semiconductors using hard x-ray and soft x-ray double source laboratory photoemission spectroscopy system

〇Hisao Makino^1,2, Jun-ichi Nomoto¹, Tetsuya Yamamoto¹ (1.Res. Inst. of KUT, 2.Kochi Univ. of Tech.)

2:45 PM - 3:15 PM

[14p-1B-4] X-ray diffraction analysis of functional oxide thin films

〇Katsuhiko Inaba¹ (1.Rigaku Corp.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 4:00 PM

[14p-1B-5] Development of AFM evaluaton technologies for topography or physical property on semiconductor & electric materials

〇Noboru Terata¹ (1.Park Systems Japan Inc.)

4:00 PM - 4:30 PM

[14p-1B-6] Atomic-resolution electronic-structure studies of metal oxides

〇Taro Hitosugi¹ (1.Tohoku Univ., AIMR)

4:30 PM - 5:00 PM

[14p-1B-7] Quantitative analysis of incident energy and ionization rates of flying particles generated by the Reactive Plasma Deposition with dc arc discharge

〇Hisashi Kitami¹, Masaru Miyashita¹, Toshiyuki Sakemi¹, Yasushi Aoki¹, Takanori Kato¹ (1.SHI)

5:00 PM - 5:30 PM

[14p-1B-8] Application of Raman spectroscopy to characterization for oxide semiconductors

〇Minoru Osada¹ (1.MANA, NIMS)

5:30 PM - 6:00 PM

[14p-1B-9] Studies on the point defects and nonradiative recombination centers in ZnO

〇Shigefusa Chichibu¹, Akira Uedono² (1.IMRAM, Tohoku Univ., 2.Univ. of Tsukuba)

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