Symposium
Symposium » New functional GaN-based laser diodes and the applications
Mon. Sep 14, 2015 2:15 PM - 5:45 PM CE (Century Hall)
座長:片山 竜二(東北大),宮嶋 孝夫(名城大)
△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation
2:15 PM - 2:30 PM
〇Takao Miyajima1, Ryuji Katayama2 (1.Meijo Univ., 2.Tohoku Univ.)
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2:30 PM - 3:00 PM
〇Hiroshi Amano1 (1.Nagoya Univ.)
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3:00 PM - 3:30 PM
〇Sunao Kurimura1, Hwan Hong Lim1, Shigeki Takeuchi2 (1.National Institute for Materials Science, 2.Kyoto University)
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3:30 PM - 4:00 PM
〇Rintaro Koda1, Yoshiro Takiguchi1, Shunsuke Kono1, Hideki Watanabe1, Yasunari Hanzawa2, Hiroshi Nakajima1, Masaki Shiozaki2, Nobuhiro Sugawara2, Noriyuki Futagawa1, Hironobu Narui1 (1.Sony Corp., 2.Sony Semiconductor Corp.)
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Break (4:00 PM - 4:15 PM)
4:15 PM - 4:45 PM
〇Mitsuru Sugawara1,2, Makoto Suzuki2, Yasuhiko Arakawa2,3 (1.QD Laser, 2.NanoQuin, The Univ. of Tokyo, 3.IIS, The Univ. of Tokyo)
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4:45 PM - 5:15 PM
〇Masao Kawaguchi1, Osamu Imafuji1, Kentaro Nagamatsu2, Kazuhiko Yamanaka2, Shinichi Takigawa1, Takuma Katayama1 (1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.)
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5:15 PM - 5:45 PM
〇Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1, Isamu Akasaki1,2 (1.Meijo Univ., 2.Akasaki Res. Cen.)
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