Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

Mon. Sep 14, 2015 1:30 PM - 3:30 PM PB2 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[14p-PB2-1] Dependence of the optical gain on the polarization in InGaAs-MSM-PDs

〇takato sato¹, Nishio Yui¹, Hirayama Naomi¹, Iida Tsutomu¹, Takanashi Yoshifumi¹ (1.TUS)

1:30 PM - 3:30 PM

[14p-PB2-2] Consideration on the Auger recombination lifetime in InAs-PHEMTs

〇Yui Nishio¹, Takato Sato¹, Naomi Hirayama¹, Tsutomu Iida¹, Yoshifumi Takanashi¹ (1.TUS)

1:30 PM - 3:30 PM

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

〇AMINE ELMOUTAOUAKIL¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

1:30 PM - 3:30 PM

[14p-PB2-4] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

〇Akira Endoh^1,2, Issei Watanabe¹, Akifumi Kasamatsu¹, Tsuyoshi Takahashi², Shoichi Shiba², Yasuhiro Nakasha², Taisuke Iwai², Takashi Mimura^1,2 (1.National Inst. of Info. and Com. Tech., 2.Fujitsu Laboratories Ltd.)

1:30 PM - 3:30 PM

[14p-PB2-5] Direct growth of graphene on a GaN surface by thermal CVD

〇Takayoshi Enomoto¹, Matusima Yusuke¹, Ueno Kazuyoshi^1,2 (1.Shibaura Inst. Tech., 2.SIT Res Center for Green Innovation)

1:30 PM - 3:30 PM

[14p-PB2-6] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface Dissociative adsorption of water molecule at step/kink site

〇Kohji Inagaki¹, Yoshitada Morikawa¹, Kazuto Yamauchi¹ (1.Osaka Univ.)

1:30 PM - 3:30 PM

[14p-PB2-7] Photoelectrochemical characterization of n-type GaN porous structures for use in photocatalytic water-splitting system

〇Hirofumi Kida¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

1:30 PM - 3:30 PM

[14p-PB2-8] Investigation of GaO_x formation process in thermal oxidation of GaN surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Mikito Nozaki¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

1:30 PM - 3:30 PM

[14p-PB2-9] Characterization of SiO₂/InAlN Interface Formed by Plasma Enhanced CVD

〇atsushi seino¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ)

1:30 PM - 3:30 PM

[14p-PB2-10] Effect of pretreatment process for surface passivation of AlGaN/GaN devices

〇Masatoshi Shinohara¹, Yutaka Kondo¹, Hiroshi Okada^2,1, Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara^1,2 (1.Toyohashi Tech, 2.EIIRIS. Toyohashi Tech)

1:30 PM - 3:30 PM

[14p-PB2-11] Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate

〇(M2)kazuki miyamoto¹, kouta takabayashi¹, yutaka tokuda¹ (1.Aichi Inst. of Technol.)

1:30 PM - 3:30 PM

[14p-PB2-12] DLTS and MCTS measurements of carbon-doped MOCVD n-GaN

〇(M1)Shougo Ueda¹, Kazuki Miyamoto¹, Yutaka Tokuda¹ (1.Aichi Inst. of Tecnol.)

1:30 PM - 3:30 PM

▲ [14p-PB2-13] Origin of ohmic contact formation on AlGaN/GaN structure grown on GaN substrate

〇Daryoush Zadeh¹, Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Corporation)

1:30 PM - 3:30 PM

[14p-PB2-14] Temperature dependence of current-voltage characteristics for Ni/low-Mg-doped p-GaN Schottky diodes

〇Toshichika Aoki¹, Kenji Shiojima¹ (1.Univ. of Fukui)

1:30 PM - 3:30 PM

[14p-PB2-15] Mapping of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink

〇Masato Shingo¹, Takafumi Ito¹, Tasuku Shigemune², Atsushi Koizumi², Takanori Kojima², Yukiyasu Kashiwagi³, Masashi Saitoh³, Kimihiro Matsukawa³, Yasufumi Fujiwara², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka Univ., 3.Osaka Munic. Tech. Res. Inst.)

1:30 PM - 3:30 PM

[14p-PB2-16] Limiting factor of breakdown voltage in AlGaN/GaN HEMT on GaN substrate with off-state breakdown voltage over 2 kV

〇Shinichi Tanabe¹, Noriyuki Watanabe¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs.)

1:30 PM - 3:30 PM

[14p-PB2-17] Evaluating the Bistability of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

1:30 PM - 3:30 PM

[14p-PB2-18] Effect of Drain Conductance in Equivalent Circuit Model for GIT Bi-directional Switch

〇Toshihide Ide¹, Mitsuaki Shimizu¹, Xu-Qiang Shen¹, Tatsuo Morita², Nobuyuki Otsuka², Tetsuzo Ueda² (1.AIST ADPERC, 2.Panasonic)

1:30 PM - 3:30 PM

[14p-PB2-19] Lateral current generation in n-AlGaAs/GaAs (001) heterojunction channels by Schottky-barrier gate illumination

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹, Hiroyuki Sakaki^2,1 (1.NIMS, 2.Toyota Tech. Inst.)

1:30 PM - 3:30 PM

[14p-PB2-20] Temperature dependence on frequency dispersion of drain conductance in AlGaN/GaN HEMT

〇Tomotaka Narita¹, Yuki Katayama¹, Keiichi Tamesue¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

1:30 PM - 3:30 PM

[14p-PB2-21] Threshold Voltage fluctuation in Normally-off GaN based transistor by selective area growth technique

〇Keita Inoue¹, Tomotaka Narita¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

Session information

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

[14p-PB2-1] Dependence of the optical gain on the polarization in InGaAs-MSM-PDs

[14p-PB2-2] Consideration on the Auger recombination lifetime in InAs-PHEMTs

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well

[14p-PB2-4] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

[14p-PB2-5] Direct growth of graphene on a GaN surface by thermal CVD

[14p-PB2-6] Analysis of reaction mechanism in Catalyst-referred etching of GaN surface Dissociative adsorption of water molecule at step/kink site

[14p-PB2-7] Photoelectrochemical characterization of n-type GaN porous structures for use in photocatalytic water-splitting system

[14p-PB2-8] Investigation of GaO_x formation process in thermal oxidation of GaN surface

[14p-PB2-9] Characterization of SiO₂/InAlN Interface Formed by Plasma Enhanced CVD

[14p-PB2-10] Effect of pretreatment process for surface passivation of AlGaN/GaN devices

[14p-PB2-11] Trap distribution on MOCVD-grown n-GaN epitaxial wafer on GaN substrate

[14p-PB2-12] DLTS and MCTS measurements of carbon-doped MOCVD n-GaN

▲ [14p-PB2-13] Origin of ohmic contact formation on AlGaN/GaN structure grown on GaN substrate

[14p-PB2-14] Temperature dependence of current-voltage characteristics for Ni/low-Mg-doped p-GaN Schottky diodes

[14p-PB2-15] Mapping of Ag/n-GaN Schottky contacts fabricated by printing of Ag nanoink

[14p-PB2-16] Limiting factor of breakdown voltage in AlGaN/GaN HEMT on GaN substrate with off-state breakdown voltage over 2 kV

[14p-PB2-17] Evaluating the Bistability of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diodes

[14p-PB2-18] Effect of Drain Conductance in Equivalent Circuit Model for GIT Bi-directional Switch

[14p-PB2-19] Lateral current generation in n-AlGaAs/GaAs (001) heterojunction channels by Schottky-barrier gate illumination

[14p-PB2-20] Temperature dependence on frequency dispersion of drain conductance in AlGaN/GaN HEMT

[14p-PB2-21] Threshold Voltage fluctuation in Normally-off GaN based transistor by selective area growth technique

Authentication

Session information

[14p-PB2-1~21] 13.8 Compound and power electron devices and process technology

▲ [14p-PB2-3] 494-GHz-fT high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In0.8Ga0.2As quantum-well

▲ [14p-PB2-13] Origin of ohmic contact formation on AlGaN/GaN structure grown on GaN substrate

Authentication

▲ [14p-PB2-3] 494-GHz-f_T high-speed InP-based high-electron-mobility transistors with MOVPE-grown InAs/In_0.8Ga_0.2As quantum-well