[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[14p-PB6-1] Solution growth of 4H-SiC bulk crystals with very low dislocation density

〇Katsunori Danno¹, Satoshi Yamaguchi², Hiroyuki Kimoto¹, Kazuaki Sato¹, Takeshi Bessho¹ (1.Toyota Motor Corp., 2.Toyota Central R & D Lab.)

4:00 PM - 6:00 PM

[14p-PB6-2] Spatial distribution of carrier concentration in n-type 4H-SiC grown by solution method

〇Zhenjiang Wang¹, Takahiko Kawaguchi¹, Kenta Murayama¹, Kenta Aoyagi¹, Shunta Harada¹, Takenobu Sakai¹, Toru Ujihara¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[14p-PB6-3] Relationship between the convection in Si-based melt and growth thickness in solution growth of SiC from the crucible bottom

〇(M1)Hodaka Kutsukake¹, Kento Hine¹, Toshinori Taishi^1,2 (1.Shinshu Univ., 2.SEES Shinshu Univ.)

4:00 PM - 6:00 PM

[14p-PB6-4] Impact Ionization Rate of 4H-SiC in the GW Approximation

〇(M1)Kosuke Konaga¹, Takao Kotani², Yoshinari Kamakura¹, Nobuya Mori¹ (1.Osaka Univ., 2.Tottori Univ.)

4:00 PM - 6:00 PM

[14p-PB6-5] HAXPES and XRD characterization of Ni-silicide/SiC interface formed by thermal annealing

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹ (1.JASRI)

4:00 PM - 6:00 PM

[14p-PB6-6] Observation of the laser ablation of SiC substrate

〇Junsuke Okamoto¹, Reina Miyagawa¹, Yu Okabe¹, Osamu Eryu¹ (1.Nagoya Inst.of Tech.)

4:00 PM - 6:00 PM

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment

〇Hikaru Akase¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Milantha de Silva¹, Hirofumi Nagatuma¹, Takamaro Kikkawa¹, Shin-ichiro Kuroki¹ (1.Hiroshima Uni.RNBS, 2.Phenitec)

4:00 PM - 6:00 PM

[14p-PB6-8] Electrical Characteristics and oxidant concentration near SiO₂/4H-SiC(000-1) Interface

〇Kohei Hanasato¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba university)

4:00 PM - 6:00 PM

[14p-PB6-9] A Unified Theory of SiC Thermal Oxidation Mechanism based on the Si and C Emission Model

〇Yasuto Hijikata¹, Ryosuke Asafuji¹ (1.Saitama Univ.)

4:00 PM - 6:00 PM

[14p-PB6-10] $\gamma$-ray irradiation for SiC MOSFETs from ROHM Co., Ltd.

〇Takahiro MAKINO¹, Shinobu ONODA¹, Mineo MIURA², Takeshi OHSHIMA¹ (1.JAEA, 2.ROHM Co., Ltd.)

4:00 PM - 6:00 PM

[14p-PB6-11] Effects of Gamma-ray Irradiation in Bias Condition on SiC MOSFETs Fabricated using Different Gate Oxidation Processes

〇(M1)KOICHI MURATA^1,2, Satoshi Mitomo^1,2, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd)

Session information

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1] Solution growth of 4H-SiC bulk crystals with very low dislocation density

[14p-PB6-2] Spatial distribution of carrier concentration in n-type 4H-SiC grown by solution method

[14p-PB6-3] Relationship between the convection in Si-based melt and growth thickness in solution growth of SiC from the crucible bottom

[14p-PB6-4] Impact Ionization Rate of 4H-SiC in the GW Approximation

[14p-PB6-5] HAXPES and XRD characterization of Ni-silicide/SiC interface formed by thermal annealing

[14p-PB6-6] Observation of the laser ablation of SiC substrate

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment

[14p-PB6-8] Electrical Characteristics and oxidant concentration near SiO₂/4H-SiC(000-1) Interface

[14p-PB6-9] A Unified Theory of SiC Thermal Oxidation Mechanism based on the Si and C Emission Model

[14p-PB6-10] $\gamma$-ray irradiation for SiC MOSFETs from ROHM Co., Ltd.

[14p-PB6-11] Effects of Gamma-ray Irradiation in Bias Condition on SiC MOSFETs Fabricated using Different Gate Oxidation Processes

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