Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:原田俊太(名大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-1A-1] Improvement of Crystallinity of SiC Thin Films on AlN/Si(110) Substrates

〇(M1)Shunki Narita¹, Kazuki Meguro¹, Hideki Nakazawa¹ (1.Hirosaki Univ.)

9:15 AM - 9:30 AM

[15a-1A-2] Mechanism of Crystallographically Rotated Growth of 3C-SiC(111) Thin Film on Si(110)

〇tai yokoyama¹, Sergey Filimonov², Hiroyuki Nagasawa¹, Hirokazu Fukidome¹, Maki Suemitsu¹ (1.Tohoku Univ. RIEC, 2.Tomsk State Univ.)

9:30 AM - 9:45 AM

△ [15a-1A-3] Rate of advance of steps analysis by in situ observation of SiC solution growth interface with high-vacuum laser microscope

〇Aomi Onuma¹, Shingo Maruyama¹, Takeshi Mitani², Tomohisa Kato², Hajime Okumura², Yuji Matsumoto^1,3 (1.Tohokou Univ., 2.AIST, 3.JST-ALCA)

9:45 AM - 10:00 AM

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

〇Kazuto Hirai¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[15a-1A-5] Amorphous SiC Film Deposition at Room Temperature under Soft Plasma

Kohei Shioda¹, Maria Tanaka¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[15a-1A-6] Repetition of SiC Epitaxial Reactor Cleaning Using Chlorine Trifluoride Gas

〇kohei shioda¹, Kosuke Mizuno¹, Hitomi Matsuda¹, Hitoshi Habuka¹, Yuuki Ishida², Toshiyuki Ohno³ (1.Yokohama Nat.Univ, 2.AIST, 3.FUPET)

10:45 AM - 11:00 AM

[15a-1A-7] SiC wafer etching rate behavior using ClF₃ gas

〇Ken Nakagomi¹, Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama.Nat.Univ., 2.AIST.)

11:00 AM - 11:15 AM

[15a-1A-8] Etching rate and surface morphology of C-face 4H-SiC epitaxial film using chlorine trifluoride gas

〇Asumi Hirooka¹, Yusuke Fukumoto¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama Nat. Univ., 2.AIST)

11:15 AM - 11:30 AM

[15a-1A-9] Removal of damaged layer on 4H-SiC surface and its effects using Si-vapor etching

〇Satoshi Torimi¹, Norihito Yabuki¹, Masato Shinohara¹, Youji Teramoto¹, Satoru Nogami¹, Tadaaki Kaneko² (1.Toyo Tanso Corp., 2.Kwansei Gakuin Univ.)

11:30 AM - 11:45 AM

△ [15a-1A-10] Control of Carrier Lifetimes in Thick n-type SiC Epilayers by High-Temperature Annealing

〇Eiji Saito¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

11:45 AM - 12:00 PM

△ [15a-1A-11] Photoluminescence Study of Oxidation-induced Faults in 4H-SiC Epilayers

〇(M1)Ryosuke Asafuji¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

Session information

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1] Improvement of Crystallinity of SiC Thin Films on AlN/Si(110) Substrates

[15a-1A-2] Mechanism of Crystallographically Rotated Growth of 3C-SiC(111) Thin Film on Si(110)

△ [15a-1A-3] Rate of advance of steps analysis by in situ observation of SiC solution growth interface with high-vacuum laser microscope

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

[15a-1A-5] Amorphous SiC Film Deposition at Room Temperature under Soft Plasma

[15a-1A-6] Repetition of SiC Epitaxial Reactor Cleaning Using Chlorine Trifluoride Gas

[15a-1A-7] SiC wafer etching rate behavior using ClF₃ gas

[15a-1A-8] Etching rate and surface morphology of C-face 4H-SiC epitaxial film using chlorine trifluoride gas

[15a-1A-9] Removal of damaged layer on 4H-SiC surface and its effects using Si-vapor etching

△ [15a-1A-10] Control of Carrier Lifetimes in Thick n-type SiC Epilayers by High-Temperature Annealing

△ [15a-1A-11] Photoluminescence Study of Oxidation-induced Faults in 4H-SiC Epilayers

Authentication

Session information

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1] Improvement of Crystallinity of SiC Thin Films on AlN/Si(110) Substrates

[15a-1A-2] Mechanism of Crystallographically Rotated Growth of 3C-SiC(111) Thin Film on Si(110)

△ [15a-1A-3] Rate of advance of steps analysis by in situ observation of SiC solution growth interface with high-vacuum laser microscope

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

[15a-1A-5] Amorphous SiC Film Deposition at Room Temperature under Soft Plasma

[15a-1A-6] Repetition of SiC Epitaxial Reactor Cleaning Using Chlorine Trifluoride Gas

[15a-1A-7] SiC wafer etching rate behavior using ClF3 gas

[15a-1A-8] Etching rate and surface morphology of C-face 4H-SiC epitaxial film using chlorine trifluoride gas

[15a-1A-9] Removal of damaged layer on 4H-SiC surface and its effects using Si-vapor etching

△ [15a-1A-10] Control of Carrier Lifetimes in Thick n-type SiC Epilayers by High-Temperature Annealing

△ [15a-1A-11] Photoluminescence Study of Oxidation-induced Faults in 4H-SiC Epilayers

Authentication

[15a-1A-7] SiC wafer etching rate behavior using ClF₃ gas