[15a-1D-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 15, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:小林康之(弘前大),太田実雄(東大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[15a-1D-1] Growth evolution of γ’-Fe₄N films grown on GaN(0001) and their interfacial structure

〇(M1)Masamitsu Kimura¹, Shigehiko Hasegawa¹ (1.ISIR)

9:00 AM - 9:15 AM

[15a-1D-2] Chemical bonding state analysis for BN films prepared by reactive plasma-assisted coating

〇Shigehiko Hasegawa¹, Masao Noma², Michiru Yamashita³, Koji Eriguchi⁴ (1.ISIR Osaka Univ., 2.SHINKO SEIKI, 3.Hyogo Pref. Inst. Technol., 4.Kyoto Univ.)

9:15 AM - 9:30 AM

[15a-1D-3] Ion irradiation effect on internal stress in single-crystal c-BN thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹, Kazuhide Kumakura¹ (1.NTT BRL)

9:30 AM - 9:45 AM

[15a-1D-4] Characterization of RF plasma nitridated α-(AlGa)₂O₃for AlGaN growth

〇Akira Buma¹, Masuda Nao¹, Araki Tsutomu¹, Oda Masaya², Hitora Toshimi² (1.Ritsumeikan Univ., 2.FLOSFIA)

9:45 AM - 10:00 AM

[15a-1D-5] Eu incorporation mechanism of Eu doped GaN grown by rf-MBE

〇hiroyuki tahara¹, hiroto sekiguchi¹, keisuke yamane¹, hiroshi okada^2,1, akihiro wakahara^1,2 (1.Toyohashi Univ. Tech., 2.EIIRIS)

10:00 AM - 10:15 AM

[15a-1D-6] Micro-Characterization of RF-MBE-grown InGaN using Conductive-AFM

〇Kazukiu Komura¹, Satoshi Usuda¹, Manato Aranami¹, Tutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[15a-1D-7] Thin-film transistors based on group III nitrides

Takeki Itoh¹, 〇Atsushi Kobayashi¹, Kohei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

10:45 AM - 11:00 AM

▲ [15a-1D-8] Thin-film transistors based on InN grown on polymer sheets at room temperature

〇KheShin Lye¹, Takeki Itoh¹, Atsushi Kobayashi¹, Kohei Ueno¹, Jitsuo Ohta¹, Hiroshi Fujioka^1,2 (1.The Univ. of Tokyo, 2.JST-ACCEL)

11:00 AM - 11:15 AM

[15a-1D-9] Investigation of HfN buffer layers for GaN growth

〇Masayuki Shinozuka¹, Jitsuo Ohta¹, Kosuke Watahiki¹, Hyelyeon Kim¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka^1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

11:15 AM - 11:30 AM

[15a-1D-10] Preparation of high crystalline GaN thin films using GaN sputtering target

〇MASAMI MESUDA¹, HIDETO KURAMOCHI¹, MITSUAKI SHIMIZU² (1.Tosoh, 2.AIST)

11:30 AM - 11:45 AM

[15a-1D-11] Growth of AlInN layer by UHV sputter epitaxy (II)

〇(M1)Keita Gomi¹, Takeshi Koda¹, Ai Mizuno¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

Session information