[15a-2H-1~10] 6.3 Oxide electronics

Tue. Sep 15, 2015 9:30 AM - 12:00 PM 2H (222)

座長:中村芳明(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[15a-2H-1] Preparation and Characterization of RF Sputtered BaTiO₃ Thin Films for ReRAM

〇Shuhei Hashimoto¹, Toshiyuki Sugie¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (1.Kyoto Inst. Tech)

9:45 AM - 10:00 AM

[15a-2H-2] Magnetic-Field-Assisted Anodization of Alminium

〇(M1C)Yusuke Hisajima¹, Yoshitaka Morishita¹ (1.Tokyo Univ. of Agri & Tech)

10:00 AM - 10:15 AM

[15a-2H-3] Resistive Switching Properties of Ni/SiO_x/Ti Nanodots/SiO_x/Ni Diodes

〇Yusuke Kato¹, Takashi Arai¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[15a-2H-4] Effect of ultraviolet light irradiation on resistance random access memory

〇Kouhei Kimura¹, Satoru Kishida^1,2,3, Koutoku Ohmi^1,3, Kentaro Kinoshita^1,2,3 (1.Tottori Univ., 2.TiFREC, 3.TEDREC)

10:30 AM - 10:45 AM

[15a-2H-5] The Shape Analysis of ReRAM Filament by Temperature Characteristics Measurement

〇(D)Takumi Moriyama^1,2, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

10:45 AM - 11:00 AM

[15a-2H-6] Elucidation of resistive switching mechanism in perovskite oxides

〇Toshiki Shiomi¹, Yuuto Hagihara¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC)

11:00 AM - 11:15 AM

[15a-2H-7] Impacts of metal electrode on the defect structure and resistive switching characteristics of amorphous SrTiO₃

〇Atsushi Tsurumaki-Fukuchi¹, Ryosuke Nakagawa¹, Reon Katsumura¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

11:15 AM - 11:30 AM

[15a-2H-8] Direct observation of filament growth by using planar-type conducting-bridge memory

〇Tomohiro Aoki¹, Yusuke Sawai¹, Atsushi Fukushima¹, Akinori Harada¹, Toshiyuki Itoh¹, Hitoshi Osawa³, Toshiaki Ina³, Motohiro Suzuki³, Naomi Kawamura³, Masaichiro Mizumaki³, Tomoya Uruga³, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.TiFREC, 3.JASRI/SPring-8)

11:30 AM - 11:45 AM

[15a-2H-9] In-situ TEM observation of a planar-type ReRAM with Cu nanogap structures

〇Ryota Yonesaka¹, Yosuke Murakami¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST, Hokkaido Univ.)

11:45 AM - 12:00 PM

[15a-2H-10] Observation of structural changes of Cu/WO_x ReRAMs during resistive switching cycles by in-situ TEM

〇Akihito Takahashi¹, Yuuki Ohno¹, Masaki Kudo¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST, Hokkaido Univ.)

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