Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[15a-2Q-1~12] 8.4 Plasma etching

Tue. Sep 15, 2015 9:00 AM - 12:15 PM 2Q (231-1)

座長:辰巳哲也(ソニー),石川健治(名大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [15a-2Q-1] Detection of micro-arc discharge using load impedance monitoring system in mass-production plasma etching

〇Yuji Kasashima¹, Fumihiko Uesugi¹ (1.AIST)

9:15 AM - 9:30 AM

[15a-2Q-2] Development of in-situ trench depth measuring system in power semiconductor

〇Kousuke Fukuchi¹, Shigeru Nakamoto¹, Satomi Inoue¹ (1.Hitachi High-Technologies)

9:30 AM - 9:45 AM

[15a-2Q-3] High-rate Etching of Copper by High-Pressure Hydrogen Plasma

〇(M2)Jumpei Sato¹, Tatsuya Hirano¹, Yusuke Kubota², Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ., 2.TOKYO ELECTRON LTD.)

9:45 AM - 10:00 AM

[15a-2Q-4] Self-limiting Cyclic Etching of SiN Using Formation and Desorption of (NH₄)₂SiF₆

〇Kazunori Shinoda¹, Miyako Matsui¹, Kenji Maeda¹, Yutaka Kudou², Tadamitsu Kanekiyo², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi, 2.Hitachi High-Tech, 3.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [15a-2Q-5] Selective Cyclic Etching of SiN Using Infrared Irradiation

〇Nobuya Miyoshi¹, Hiroyuki Kobayashi¹, Kazunori Shinoda¹, Kenji Maeda¹, Yutaka Kudo², Tadamitsu Kanekiyo², Masaru Izawa² (1.Hitachi, 2.Hitachi High-Tech)

10:15 AM - 10:30 AM

△ [15a-2Q-6] Dependence of Sidewall Surface Reaction on Wafer Temperature for Organic film

〇Yusuke Fukunaga¹, Takayoshi Tsutsumi¹, Keigo Takeda¹, Kenji Ishikawa¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[15a-2Q-7] [JSAP Young Scientist Award Speech] Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

〇Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (1.Kyoto Univ.)

11:00 AM - 11:15 AM

△ [15a-2Q-8] Layer by layer etching of LaAlSiOx

〇Kazuhito Furumoto¹, Kazuhisa Matsuda¹, Toshiyuki Sasaki¹, Mitsuhiro Omura¹, Itsuko Sakai¹, Hisataka Hayashi¹ (1.Toshiba.Corp.)

11:15 AM - 11:30 AM

△ [15a-2Q-9] Hydrogen-damage-layer effects on ZnO etching by CH₄ plasma

〇HU LI¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

11:30 AM - 11:45 AM

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)

〇Yuichi Murakami¹, Michiro Isobe¹, Keita Miyake¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Sony)

11:45 AM - 12:00 PM

[15a-2Q-11] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (3)

〇Tomohiro Kubota¹, Yoshiyuki Kikuchi², Toshihisa Nozawa², Hiroshi Ito³, Momoji Kubo³, Seiji Samukawa^1,4 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.IMR, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

12:00 PM - 12:15 PM

[15a-2Q-12] Ar plasma Effects on Si and Al₂O₃ substrates

〇Masashi Seki¹, Chiaki Tanuma² (1.Toshiba TEC Corp., 2.Hosei Univ.)

Session information

[15a-2Q-1~12] 8.4 Plasma etching

△ [15a-2Q-1] Detection of micro-arc discharge using load impedance monitoring system in mass-production plasma etching

[15a-2Q-2] Development of in-situ trench depth measuring system in power semiconductor

[15a-2Q-3] High-rate Etching of Copper by High-Pressure Hydrogen Plasma

[15a-2Q-4] Self-limiting Cyclic Etching of SiN Using Formation and Desorption of (NH₄)₂SiF₆

△ [15a-2Q-5] Selective Cyclic Etching of SiN Using Infrared Irradiation

△ [15a-2Q-6] Dependence of Sidewall Surface Reaction on Wafer Temperature for Organic film

[15a-2Q-7] [JSAP Young Scientist Award Speech] Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

△ [15a-2Q-8] Layer by layer etching of LaAlSiOx

△ [15a-2Q-9] Hydrogen-damage-layer effects on ZnO etching by CH₄ plasma

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)

[15a-2Q-11] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (3)

[15a-2Q-12] Ar plasma Effects on Si and Al₂O₃ substrates

Authentication

Session information

[15a-2Q-1~12] 8.4 Plasma etching

△ [15a-2Q-1] Detection of micro-arc discharge using load impedance monitoring system in mass-production plasma etching

[15a-2Q-2] Development of in-situ trench depth measuring system in power semiconductor

[15a-2Q-3] High-rate Etching of Copper by High-Pressure Hydrogen Plasma

[15a-2Q-4] Self-limiting Cyclic Etching of SiN Using Formation and Desorption of (NH4)2SiF6

△ [15a-2Q-5] Selective Cyclic Etching of SiN Using Infrared Irradiation

△ [15a-2Q-6] Dependence of Sidewall Surface Reaction on Wafer Temperature for Organic film

[15a-2Q-7] [JSAP Young Scientist Award Speech] Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas

△ [15a-2Q-8] Layer by layer etching of LaAlSiOx

△ [15a-2Q-9] Hydrogen-damage-layer effects on ZnO etching by CH4 plasma

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CHx+)

[15a-2Q-11] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction (3)

[15a-2Q-12] Ar plasma Effects on Si and Al2O3 substrates

Authentication

[15a-2Q-4] Self-limiting Cyclic Etching of SiN Using Formation and Desorption of (NH₄)₂SiF₆

△ [15a-2Q-9] Hydrogen-damage-layer effects on ZnO etching by CH₄ plasma

△ [15a-2Q-10] Molecular dynamics simulation analyses of the mechanisms of SiN etching by simultaneous incidence of hydrogen radicals and hydrocarbon ions (CH_x⁺)

[15a-2Q-12] Ar plasma Effects on Si and Al₂O₃ substrates