Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15a-4C-1~13] 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 9:00 AM - 12:30 PM 4C (432)

座長:牧山剛三(富士通研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-4C-1] Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures

〇Aki Sasakura¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

9:15 AM - 9:30 AM

[15a-4C-2] Dependence of pattern size on reduction of contact resistance of ohmic contacts with uneven AlGaN layers for AlGaN/GaN high electron mobility transistors

〇TOMOHIRO SHIMODA¹, Yusuke Takei¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

9:30 AM - 9:45 AM

[15a-4C-3] Characterization of TiN gated GaN schottky diodes with Mg₃N₂ insertion

〇Yuta Ikeuchi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

9:45 AM - 10:00 AM

[15a-4C-4] Mapping of n-GaN Schottky contacts degraded by voltage stress

〇Shingo Murase¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

10:00 AM - 10:15 AM

[15a-4C-5] Mapping of degradation of Au/a-IGZO Schottky cantacts by using scanning internal photoemission microscopy

〇Masato Shingo¹, Kenji Shiojima¹ (1.Univ. of Fukui)

10:15 AM - 10:30 AM

△ [15a-4C-6] Photocurrent of Homoepitaxial n-type GaN Schottky-barrier Diode

〇Takuya Maeda¹, Masaya Okada², Masaki Ueno², Yoshiyuki Yamamoto², Masahiro Horita³, Jun Suda³ (1.Kyoto Univ., 2.Sumitomo Electric Industries,Ltd., 3.Dept. of Electron. Sci&Eng.,Kyoto Univ.)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [15a-4C-7] Analyses of photoanodized GaN surface in back-side illumination mode

〇Masaaki Edamoto¹, Yusuke Kumazaki¹, Zenji Yatabe¹, Taketomo Sato¹ (1.RCIQE,Hokkaido Univ.)

11:00 AM - 11:15 AM

△ [15a-4C-8] Effect of High-Pressure Water Vapor Annealing for GaN MIS Interface Characteristics

〇Koji Yoshitsugu¹, Masahiro Horita², Yuki Tada¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Kyoto Univ.)

11:15 AM - 11:30 AM

[15a-4C-9] Microscopic evaluation of Mg-ion-implanted GaN layers

〇YUSUKE SAIJO¹, HIROHUMI TSUGE¹, SHUGEKI KATO¹, NISHIMURA TOMOAKI¹, TOMOYOSHI MISHIMA¹, TOHRU NAKAMURA¹ (1.Hosei Univ.)

11:30 AM - 11:45 AM

[15a-4C-10] Investigation of suitable deposition methods of SiNx for p-GaN

〇Ikumi Oda¹, Naoki Kaneda², Seira Yamaguchi³, Keisuke Ohdaira³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.JAIST)

11:45 AM - 12:00 PM

[15a-4C-11] Improved Current Collapse by O2 plasma treatment in AlGaN/GaN HEMTs with GaN cap layer

〇Satoshi Yoshida¹, Yoshiki Sakaida, Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

12:00 PM - 12:15 PM

[15a-4C-12] Estimation of ALD-Al₂O₃/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

〇Toshiharu Kubo¹, Makoto Miyoshi¹, Takashi Egawa¹ (1.Naogya Inst.)

12:15 PM - 12:30 PM

[15a-4C-13] GaN-MOSFET characteristics with SiO₂ formed by plasma CVD

〇Katsunori Ueno¹, Shinya Takashima¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric Co., 2.Univ. of Yamanashi)

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