Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)

座長:黒木伸一郎(広島大),升本恵子(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[15p-1A-1] [Young Scientist Presentation Award Speech] Impact Ionization Coefficients in SiC Toward Ultrahigh-Voltage Power Devices

〇Hiroki Niwa¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM

[15p-1A-2] 3D-integration of Si-based Peltier device onto 4H-SiC power device

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ, 2.Mazda Motor Corp.)

2:00 PM - 2:15 PM

[15p-1A-3] SiC semiconductor phase-leg power module with low parasitic inductance

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Tetsuya Mori¹, Takaya Fujita¹, Satoshi Tanimoto¹ (1.NISSAN ARC)

2:15 PM - 2:30 PM

[15p-1A-4] Electrical Characteristics of SiC Schottky Diode with Laminated Mo/C Electrode

〇(M1)Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

2:30 PM - 2:45 PM

[15p-1A-5] Low resistance SiC/Carbon Interstitial type Metal/Ni ohmic contact formation by Laser annealing

〇Desilva Milantha¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semi.Corp.)

2:45 PM - 3:00 PM

△ [15p-1A-6] Improvement in Contact Resistance of 4H-SiC by Excimer Laser Doping

〇Ryota Kojima¹, Hiroshi Ikenoue¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (1.Kyushu Univ.)

3:00 PM - 3:15 PM

[15p-1A-7] High Efficiency Activation of Hot-implanted Phosphorus atoms into 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Irradiation

〇Hiroaki Hanafusa¹, Ryosuke Ishimaru¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 4:00 PM

[15p-1A-8] [JSAP Paper Award Speech] Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

〇Ryohei Tanuma¹, Masahiro Nagano¹, Isaho Kamata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

4:00 PM - 4:15 PM

[15p-1A-9] Noncontact and nondestructive measurement of electrical properties for SiC film using THz ellipsometry

〇Takashi Fujii^1,2, Iwamoto Toshiyuki¹, Sato Yukinori¹, Tachi Kohei², Araki Tsutomu², Nanishi Yasushi², Sugie Ryuichi³, Morita Noayoshi³, Nagashima Takeshi⁴ (1.PNP, 2.Ritsumeikan Univ., 3.TRC, 4.Setsunan Univ.)

4:15 PM - 4:30 PM

[15p-1A-10] Observation of basal plane dislocation in 4H-SiC wafer by mirror projection electron microscopy and low-energy SEM

〇Toshiyuki Isshiki¹, Yoshihisa Orai², Takahiro Sato² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech.)

4:30 PM - 4:45 PM

[15p-1A-11] Stacking Fault Expansion in 4H-SiC by Electron-beam Erradiation and Contraction by Thermal Annealing

〇Yoshifumi Yamashita¹, Ryu Nakata¹, Takuya Shimomura¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

4:45 PM - 5:00 PM

[15p-1A-12] Hole capture cross section of Al level in 4H-SiC

〇(M2)DI JING¹, MASASHI KATO¹, MASAYA ICHIMURA¹, KAZUTOSHI KOJIMA² (1.Nagoya Inst. Tech., 2.AIST)

5:00 PM - 5:15 PM

△ [15p-1A-13] Performance improvement of 3C-SiC photoelectrodes by supporting catalysts

〇naoto ichikawa¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

5:15 PM - 5:30 PM

[15p-1A-14] Methane production by CO₂reduction with 3C-SiC photo-electrode

〇shunnosuke Akabane¹, Go Sahara¹, Naosumi Ichikawa², Masashi Kato², Kazuhiko Maeda¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Mutsuko Hatano¹ (1.Tokyo Inst. of Tech, 2.Nagoya Inst. of Tech)

Session information