Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

Tue. Sep 15, 2015 1:30 PM - 7:15 PM 2R (231-2)

座長:立岡浩一(静岡大),鵜殿治彦(茨城大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[15p-2R-1] [Young Scientist Presentation Award Speech] Crystal structure and thermoelectric properties of the novel compound prepared in the Na–Al–Sn system

〇Masahiro Kanno¹, Takahiro Yamada¹, Hisanori Yamane¹, Hideaki Nagai² (1.IMRAM Tohoku Univ., 2.AIST)

1:45 PM - 2:00 PM

[15p-2R-2] Chemical vapor deposition of silicide films composed of W-encapsulating Si clusters

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

2:00 PM - 2:15 PM

[15p-2R-3] Optical characterization of Na doped type II Ge clathrate films grown on sapphire substrate

Hiroyuki Manjo¹, Tetsuya Mukai¹, Shota Suzuki¹, 〇Fumitaka Ohashi¹, Takayuki Ban¹, Tetsuji Kume¹, Shuichi Nonomura¹ (1.Gifu Univ.)

2:15 PM - 2:30 PM

[15p-2R-4] Abnormal electrical property by applying dynamic strain in p-type Si wafer

〇Kazuki Tsuruta¹, Masaki Mito¹, Takayuki Tajiri², Yuki Katamune³, Tsuyoshi Yoshitake³ (1.Kyushu Inst. of Tech., 2.Fukuoka Univ., 3.Kyushu Univ.)

2:30 PM - 2:45 PM

▲ [15p-2R-5] Damage free neutral beam texturing of honeycomb pattern for the application of light trapping in Si Solar cells

〇(P)Halubai Sekhar¹, Hitoshi Sai², Aiko Sato³, Mohammad Maksudur Rahman⁴, Tomohiro Kubota⁴, Seiji Samukawa^4,5, Hidetaka Takato¹, Michio Kondo¹ (1.Fukushima Renewable Energy Institute, AIST, Japan, 2.RCPV, Tsukuba, AIST, Japan, 3.Fukushima University, Japan, 4.Institute of Fluid Science, Tohoku University, Sendai, Japan, 5.WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan)

2:45 PM - 3:00 PM

[15p-2R-6] High-pressure synthesis of carbon nitride related material with nano-amorphous carbon nitride precursor

〇Nozomu Yasui¹, Masaya Sougawa¹, Masaaki Hirai¹, Kaoru Yamamoto¹, Kenichi Takarabe¹, Taku Okada², Daisuke Yamazaki³, Yohei Kojima⁴, Hiroaki Ohfuji⁴, Shinsuke Kunitsugu⁵, Junji Sawahata⁶ (1.Okayama Univ.of Sci., 2.ISSP, Univ. of Tokyo, 3.ISEI, Okayama Univ., 4.GRC, Ehime Univ., 5.ITCO, 6.Ibaraki Nat. Col. Tech.)

3:00 PM - 3:15 PM

[15p-2R-7] Luminescence Properties of Gallium-Doped Zinc Oxide Nanowire

〇takaya nakane¹ (1.Toyohashi Univ.)

3:15 PM - 3:30 PM

[15p-2R-8] Evalution of the Mn-doped ZnO thin film formed on sapphire substrates.

〇Nao Nasu¹, Yu Zhang¹, Xinwei Zhao¹ (1.Tokyo Univ. of Sci)

3:30 PM - 3:45 PM

[15p-2R-9] Li Ion Dynamics Assisted Nonvolatile Voltage Memory

〇Issei Sugiyama¹, Tohru Suzuki¹, Ryota Shimizu¹, Susumu Shiraki¹, Taro Hitosugi¹ (1.Tohoku Univ.)

3:45 PM - 4:00 PM

[15p-2R-10] Quantum dynamics simulation of strained grapheme using time-dependent wave packet propagation method

〇Shotaro Sakoda¹, Kenji Sasaoka¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

4:00 PM - 4:15 PM

[15p-2R-11] Analysis of time dependent electrical transport properties of strained armchair graphene nanoribbons by using the Schrödinger equation for an open system

〇(M1)daiki katou¹, kenji sasaoka¹, matsuto ogawa¹, satofumi souma¹ (1.Kobe Univ.)

Break (4:15 PM - 4:30 PM)

4:30 PM - 4:45 PM

△ [15p-2R-12] Studies of stable structures of BaSi₂(011)/(011) twin boundaries by first-principle calculations

〇Masakazu Baba¹, Masanori Koyama², Kaoru Toko¹, Takashi Suemasu^1,3 (1.Univ. Tsukuba, 2.AIST, 3.JST-CREST)

4:45 PM - 5:00 PM

[15p-2R-13] Characterization of electrical and optical properties of BaSi₂ epitaxial films
grown on Si(111) by molecular beam epitaxy with in-situ MoO_x capping

〇Hiroki Takeuchi¹, Weijie Du¹, Ryouta Takabe¹, Kaoru Toko¹, Kousuke Hara², Noritaka Usami^3,4, Takashi Suemasu^1,4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

5:00 PM - 5:15 PM

[15p-2R-14] Characterization of defect levels in boron p-BaSi₂ epitaxial films on Si(111) by deep level transient spectroscopy

〇Hiroki Takeuchi¹, Weijie Du¹, Ryouta Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (1.Univ. Tsukuba, 2.JST-CREST)

5:15 PM - 5:30 PM

[15p-2R-15] Measurement of valence-band offset at native oxide/BaSi₂ interfaces using hard x-ray photoelectron spectroscopy

〇Ryota Takabe¹, Keita Ito^1,2,3, Weijie Du¹, Kaoru Toko¹, Shigenori Ueda⁴, Akio Kimura⁵, Takashi Suemasu^1,6 (1.Univ. Tsukuba, 2.JSPS, 3.Tohoku Univ., 4.SPring-8/NIMS, 5.Hiroshima Univ., 6.JST-CREST)

5:30 PM - 5:45 PM

[15p-2R-16] Photoresponse properties of BaSi₂ epitaxial films on Ge(111) substrates

〇Ryota Takabe¹, Masakazu Baba¹, Weijie Du¹, Kosuke O. Hara², Kaoru Toko¹, Noritaka Usami^3,4, Takashi Suemasu^1,4 (1.Univ. Tsukuba, 2.Univ. Yamanashi, 3.Nagoya Univ., 4.JST-CREST)

5:45 PM - 6:00 PM

[15p-2R-17] Control of Electrical Properties of BaSi₂ Thin Films by Alkali-metal-fluoride Treatment

〇Kosuke Hara^1,2, Weijie Du³, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Kaoru Toko³, Takashi Suemasu^2,3, Noritaka Usami^2,4 (1.Univ. Yamanashi, 2.JST-CREST, 3.Univ. Tsukuba, 4.Nagoya Univ.)

6:00 PM - 6:15 PM

[15p-2R-18] Investigation of formation mechanism of orientation of BaSi₂ films grown by vacuum evaporation

〇(M2)Yoshihiko Nakagawa¹, Kosuke O. Hara^2,3, Yasuyoshi Kurokawa¹, Takashi Suemasu^3,4, Noritaka Usami^1,3 (1.Nagoya Univ., 2.Univ. of Yamanashi, 3.JST-CREST, 4.Univ. of Tsukuba)

6:15 PM - 6:30 PM

[15p-2R-19] Evaluation of BaSi₂ semiconductor thin film fabricated by co-evaporation method

〇Atsuya Sasaki¹, Akito Sasaki¹, Yoshinori Kataoka¹, Katsuaki Aoki¹, Shuichi Saito¹, Kumpei Kobayashi¹ (1.Toshiba Materials)

6:30 PM - 6:45 PM

[15p-2R-20] Polarized Raman spectra of BaSi₂ epitaxial film

〇Haruki Yamaguchi¹, Sumito Ogata¹, Hiroaki Tsukamoto¹, Takashi Suemasu², Yoshikazu Terai^1,3 (1.Kagoshima Univ., 2.Univ. of Tsukuba, 3.Kyushu Inst. of Tech.)

6:45 PM - 7:00 PM

[15p-2R-21] Photoreflectance spectra of BaSi₂ epitaxial film

〇Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Kazuki Yamasaki³, Takashi Suemasu², Yoshikazu Terai^1,3 (1.Kagoshima Univ., 2.Univ. of Tsukuba, 3.Kyushu Inst. of Tech.)

7:00 PM - 7:15 PM

[15p-2R-22] Crystal Structure and energy gap of Ba_1-xSr_xSi₂

〇Motoharu Imai¹, Yoshitaka Matsushita¹ (1.NIMS)

Session information

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

[15p-2R-1] [Young Scientist Presentation Award Speech] Crystal structure and thermoelectric properties of the novel compound prepared in the Na–Al–Sn system

[15p-2R-2] Chemical vapor deposition of silicide films composed of W-encapsulating Si clusters

[15p-2R-3] Optical characterization of Na doped type II Ge clathrate films grown on sapphire substrate

[15p-2R-4] Abnormal electrical property by applying dynamic strain in p-type Si wafer

▲ [15p-2R-5] Damage free neutral beam texturing of honeycomb pattern for the application of light trapping in Si Solar cells

[15p-2R-6] High-pressure synthesis of carbon nitride related material with nano-amorphous carbon nitride precursor

[15p-2R-7] Luminescence Properties of Gallium-Doped Zinc Oxide Nanowire

[15p-2R-8] Evalution of the Mn-doped ZnO thin film formed on sapphire substrates.

[15p-2R-9] Li Ion Dynamics Assisted Nonvolatile Voltage Memory

[15p-2R-10] Quantum dynamics simulation of strained grapheme using time-dependent wave packet propagation method

[15p-2R-11] Analysis of time dependent electrical transport properties of strained armchair graphene nanoribbons by using the Schrödinger equation for an open system

△ [15p-2R-12] Studies of stable structures of BaSi₂(011)/(011) twin boundaries by first-principle calculations

[15p-2R-13] Characterization of electrical and optical properties of BaSi₂ epitaxial films
grown on Si(111) by molecular beam epitaxy with in-situ MoO_x capping

[15p-2R-14] Characterization of defect levels in boron p-BaSi₂ epitaxial films on Si(111) by deep level transient spectroscopy

[15p-2R-15] Measurement of valence-band offset at native oxide/BaSi₂ interfaces using hard x-ray photoelectron spectroscopy

[15p-2R-16] Photoresponse properties of BaSi₂ epitaxial films on Ge(111) substrates

[15p-2R-17] Control of Electrical Properties of BaSi₂ Thin Films by Alkali-metal-fluoride Treatment

[15p-2R-18] Investigation of formation mechanism of orientation of BaSi₂ films grown by vacuum evaporation

[15p-2R-19] Evaluation of BaSi₂ semiconductor thin film fabricated by co-evaporation method

[15p-2R-20] Polarized Raman spectra of BaSi₂ epitaxial film

[15p-2R-21] Photoreflectance spectra of BaSi₂ epitaxial film

[15p-2R-22] Crystal Structure and energy gap of Ba_1-xSr_xSi₂

Authentication

Session information

[15p-2R-1~22] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [15p-2R-5] Damage free neutral beam texturing of honeycomb pattern for the application of light trapping in Si Solar cells

△ [15p-2R-12] Studies of stable structures of BaSi2(011)/(011) twin boundaries by first-principle calculations

Authentication

△ [15p-2R-12] Studies of stable structures of BaSi₂(011)/(011) twin boundaries by first-principle calculations