Oral presentation

17 Nanocarbon Technology » 17.1 Growth technology

[15p-2U-2~11] 17.1 Growth technology

Tue. Sep 15, 2015 2:00 PM - 4:45 PM 2U (233)

座長:安藤淳(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

〇TOMOYUKI TAKAHASHI¹, Toshiaki Kato¹, Toshiro Kaneko¹ (1.Dept. of Electronic Eng., Tohoku Univ.)

2:15 PM - 2:30 PM

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS₂ on graphite

〇(M2)Yu Kobayashi¹, Shogo Sasaki¹, Shohei Mori¹, Hiroki Hibino², Zheng Liu³, Kenji Watanabe⁴, Takashi Taniguchi⁴, Kazu Suenaga³, Yutaka Maniwa¹, Yasumitsu Miyata^1,5 (1.Tokyo Mtro. Univ., 2.NTT, 3.AIST, 4.NIMS, 5.JST-PRESTO)

2:30 PM - 2:45 PM

[15p-2U-4] CVD growth and characterization of Nb-doped WS₂ monolayers

〇shogo sasaki¹, Yu Kobayashi¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO)

2:45 PM - 3:00 PM

[15p-2U-5] Synthesis and characterization of Mo_1-xRe_xS₂/MoS₂ heterostructures

〇Syohei Mori¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO.)

3:00 PM - 3:15 PM

△ [15p-2U-6] Formation of Layered MoS₂by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C₄H₉)₂S₂

〇Yusuke Hibino¹, Seiya Ihishara¹, Naomi Sawamoto¹, Takumi Ohashi², Kentarou Matsuura², Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi², Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Institute of Technology, 3.Gas Phase Growth Ltd.)

Break (3:15 PM - 3:30 PM)

3:30 PM - 3:45 PM

△ [15p-2U-7] Fabrication of Single-Layer MoS₂ Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

〇SEIYA ISHIHARA¹, YUSUKE HIBINO¹, NAOMI SAWAMOTO¹, KOHEI SUDA¹, TAKUMI OHASHI², KENTAROU MATSUURA², HIDEAKI MACHIDA³, MASATO ISHIKAWA³, HIROSHI SUDOH³, HITOSHI WAKABAYASHI², ATSUSHI OGURA¹ (1.Meiji Univ., 2.Tokyo Tech., 3.Gas-phase Growth Ltd.)

3:45 PM - 4:00 PM

▼ [15p-2U-8] Growth of highly-oriented MoS₂ thin films over large-area

〇(DC)Sinae Heo^1,2, Ryoma Hayakawa¹, Toyohiro Chikyow¹, Yutaka Wakayama^1,2 (1.National Institute for Materials Science, 2.Kyushu University)

4:00 PM - 4:15 PM

△ [15p-2U-9] First-principles calculations of the orientation of MoS₂ on Al₂O₃(0001) substrate

〇Hideyuki Jippo¹, Kenjiro Hayashi¹, Shintaro Sato¹, Mari Ohfuchi¹ (1.Fujitsu Labs. Ltd.)

4:15 PM - 4:30 PM

[15p-2U-10] Theoretical Study of Very Initial Stage of MoS₂Crystal Growth

〇(M1)katsuya okada¹, Hiroyuki Kageshima¹ (1.Shimane Univ.)

4:30 PM - 4:45 PM

▼ [15p-2U-11] Vertical Heterostructures of MoS₂ and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors

〇(D)Rozan Mohamad Yunus¹, Hiroko Endo¹, Masaharu Tsuji¹, Hiroki Ago^1,2 (1.Kyushu Univ., 2.PRESTO-JST)

Session information

[15p-2U-2~11] 17.1 Growth technology

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS₂ on graphite

[15p-2U-4] CVD growth and characterization of Nb-doped WS₂ monolayers

[15p-2U-5] Synthesis and characterization of Mo_1-xRe_xS₂/MoS₂ heterostructures

△ [15p-2U-6] Formation of Layered MoS₂by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C₄H₉)₂S₂

△ [15p-2U-7] Fabrication of Single-Layer MoS₂ Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

▼ [15p-2U-8] Growth of highly-oriented MoS₂ thin films over large-area

△ [15p-2U-9] First-principles calculations of the orientation of MoS₂ on Al₂O₃(0001) substrate

[15p-2U-10] Theoretical Study of Very Initial Stage of MoS₂Crystal Growth

▼ [15p-2U-11] Vertical Heterostructures of MoS₂ and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors

Authentication

Session information

[15p-2U-2~11] 17.1 Growth technology

△ [15p-2U-2] Large Area Synthesis of Monolayer Tungsten Disulfide and its Growth Mechanism

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS2 on graphite

[15p-2U-4] CVD growth and characterization of Nb-doped WS2 monolayers

[15p-2U-5] Synthesis and characterization of Mo1-xRexS2/MoS2 heterostructures

△ [15p-2U-6] Formation of Layered MoS2 by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C4H9)2S2

△ [15p-2U-7] Fabrication of Single-Layer MoS2 Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

▼ [15p-2U-8] Growth of highly-oriented MoS2 thin films over large-area

△ [15p-2U-9] First-principles calculations of the orientation of MoS2 on Al2O3(0001) substrate

[15p-2U-10] Theoretical Study of Very Initial Stage of MoS2 Crystal Growth

▼ [15p-2U-11] Vertical Heterostructures of MoS2 and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors

Authentication

△ [15p-2U-3] Growth and optical properties of high-quality monolayer WS₂ on graphite

[15p-2U-4] CVD growth and characterization of Nb-doped WS₂ monolayers

[15p-2U-5] Synthesis and characterization of Mo_1-xRe_xS₂/MoS₂ heterostructures

△ [15p-2U-6] Formation of Layered MoS₂by Sulfurization of E-beam Evaporated Mo Thin Film using (t-C₄H₉)₂S₂

△ [15p-2U-7] Fabrication of Single-Layer MoS₂ Thin Film by Combination of Sputtering Deposition and Sulfurization Annealing using Organic Precursor

▼ [15p-2U-8] Growth of highly-oriented MoS₂ thin films over large-area

△ [15p-2U-9] First-principles calculations of the orientation of MoS₂ on Al₂O₃(0001) substrate

[15p-2U-10] Theoretical Study of Very Initial Stage of MoS₂Crystal Growth

▼ [15p-2U-11] Vertical Heterostructures of MoS₂ and Graphene Nanoribbons by Two-Step Chemical Vapor Deposition for High-Gain Photodetectors