Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[15p-4C-1~14] 13.8 Compound and power electron devices and process technology

Tue. Sep 15, 2015 2:00 PM - 5:45 PM 4C (432)

座長:塩島謙次(福井大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[15p-4C-1] Electrical properties of AlGaN/GaN MOS-HEMT with AlON gate insulators

〇Ryohei Asahara¹, Joyo Ito¹, Mikito Nozaki¹, Takahiro Yamada¹, Satoshi Nakazawa², Masahiro Ishida², Tetsuzo Ueda², Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic)

2:15 PM - 2:30 PM

[15p-4C-2] Analysis of carrier capture and emission in AlGaN/GaN HEMT with bias-controllable filed plate

〇Suguru Mase¹, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

2:30 PM - 2:45 PM

[15p-4C-3] High Breakdown Voltage AlGaN/GaN HEMTs on Free-Standing GaN Substrate

〇(M1)JIEHONG NG¹, T. Asubar Joel¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

2:45 PM - 3:00 PM

[15p-4C-4] Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs

〇Yuichi Minoura¹, Naoya Okamoto¹, Toshihiro Ohki¹, Shiro Ozaki¹, Kozo Makiyama¹, Yoichi Kamada¹, Keiji Watanabe¹ (1.Fujitsu Labs.)

3:00 PM - 3:15 PM

[15p-4C-5] Reduction of gate leakage current in AlGaN/GaN HEMTs by controlling cap/barrier interface

〇Atsushi Yamada¹, Junji Kotani¹, Tetsuro Ishiguro¹, Shuichi Tomabechi¹, Norikazu Nakamura¹, Keiji Watanabe¹ (1.Fujitsu Labs.)

3:15 PM - 3:30 PM

[15p-4C-6] InAlN/GaN HEMTs with 110-GHz f_T using a low gate capacitance Y-gate process by an i-line stepper

〇Hiroyuki Ichikawa¹, Isao Makabe¹, Tsuyoshi Kouchi¹, Ken Nakata¹, Kazutaka Inoue¹ (1.Sumitomo Electric Industries, Ltd.)

3:30 PM - 3:45 PM

[15p-4C-7] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (IV)

〇Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (1.NICT, 2.Fujitsu Lab.)

Break (3:45 PM - 4:00 PM)

4:00 PM - 4:15 PM

[15p-4C-8] Diode Operation in Normally-off GaN HEMT with High Controllability of Threshold Voltage

〇TAKAYA NAGAI¹, Naoki Kato¹, Tomotaka Narita¹, Yamato Osada², Ryuichiro Kamimura², Kenji Itou³, Akio Wakejima¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech., 2.ULVAC, 3.Kanazawa Inst. of Tech.)

4:15 PM - 4:30 PM

[15p-4C-9] Temperature Characteristics in δ-doped GaN Cap/AlGaN/GaN Heterostrucutre

〇(M1)naoki kato¹, Takaya Nagai¹, Akio Wakejima¹, Takashi Egawa¹, Yamato Osada², Ryuichiro Kamimura² (1.Nagoya Inst. of Tech, 2.ULVAC)

4:30 PM - 4:45 PM

[15p-4C-10] Electrical properties of p-Si/n-GaN junctions by surface activated bonding

〇(M1)takuya nishimura¹, Jianbo Liang¹, Noriyuki Watanabe², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NTT Device Technology Labs.,NTT Corp)

4:45 PM - 5:00 PM

[15p-4C-11] Direct observation of temperature distribution in transferred AlGaN/GaN HEMTs on a copper plate by micro-Raman spectroscopy

〇Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (1.NTT BRL)

5:00 PM - 5:15 PM

[15p-4C-12] Electrical characteristics of GaAs/GaN junctions by using surface-activated bonding

〇(M1)shoji yamajo¹, Jianbo Liang¹, Noriyuki Watanabe², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.NTT Device Technology Laboratories)

5:15 PM - 5:30 PM

[15p-4C-13] Analysis of electron mobility in AlGaN cannel 2DEG heterostructures

〇Makoto Miyoshi¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

5:30 PM - 5:45 PM

[15p-4C-14] Performance Prediction of InAlN/AlGaN HFETs for Power Device Application

〇Tatsuya Tsutsumi¹, Nishino Gosuke¹, Joseph Freedsman¹, Miyoshi Makoto¹, Egawa Takashi¹ (1.Nagoya Inst.)

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