1:15 PM - 1:30 PM
△ [15p-4F-1] Fabrication of diamond surface-channel FET structure using ferroelectric gate insulator
〇RYOTA KARAYA1, Hiroki Furuichi1, Ikki Baba1, Yosuke Mori1, Takashi Nakajima2, Norio Tokuda1, Takeshi Kawae1 (1.Kanazawa Univ., 2.Tokyo Univ. of Sci.)