Session information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方泰斗(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:00 AM - 9:15 AM

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO₂/4H-SiC

〇Hiromasa Watanabe¹, Ohta Akio¹, Makihara Katsunori¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

Tomoya Sasago¹, Hitoshi Arai¹, Koji Kita², Takayuki Muro³, 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.The Univ. of Tokyo, 3.Japan Synchrotron Radiation Research Institute)

9:30 AM - 9:45 AM

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

〇Hitoshi Arai¹, Hiroshi Nohira¹ (1.Tokyo City Univ.)

9:45 AM - 10:00 AM

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka³, Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

10:00 AM - 10:15 AM

[16a-1A-5] Oxidation of 4H-SiC by Atmospheric Pressure Thermal-Plasma-Jet

〇Ryosuke Ishimaru¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

10:15 AM - 10:30 AM

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

〇Yuki Fujino¹, Koji Kita¹ (1.The Univ. of Tokyo)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

〇Daisuke Nagai¹, Sometani Mitsuru², Hosoi Takuji¹, Shimura Takayoshi¹, Watanabe Heiji¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)

11:00 AM - 11:15 AM

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas

〇(P)Atthawut Chanthaphan¹, Yen Hung Cheng¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

〇YOSHIHITO KATSU¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[16a-1A-10] The Gamma-ray Irradiation Effect on SiC-MOSFETs with Various Device Structure

〇satoshi mitomo^1,2, Takuma Matsuda^1,2, Koichi Murata^1,2, Takashi Yokozeki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikirou Kandori³, Toru Yosie³, Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co.)

11:45 AM - 12:00 PM

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama University, 2.JAEA, 3.Sanken Electric Co.)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the official guidebook which will be distributed at the venue.
The password will be sent to all JSAP members in March 2016.

Please log in with your participant account.
» Participant Log In

▲