Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方泰斗(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO₂/4H-SiC

〇Hiromasa Watanabe¹, Ohta Akio¹, Makihara Katsunori¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

Tomoya Sasago¹, Hitoshi Arai¹, Koji Kita², Takayuki Muro³, 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.The Univ. of Tokyo, 3.Japan Synchrotron Radiation Research Institute)

9:30 AM - 9:45 AM

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

〇Hitoshi Arai¹, Hiroshi Nohira¹ (1.Tokyo City Univ.)

9:45 AM - 10:00 AM

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka³, Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

10:00 AM - 10:15 AM

[16a-1A-5] Oxidation of 4H-SiC by Atmospheric Pressure Thermal-Plasma-Jet

〇Ryosuke Ishimaru¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

10:15 AM - 10:30 AM

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

〇Yuki Fujino¹, Koji Kita¹ (1.The Univ. of Tokyo)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

〇Daisuke Nagai¹, Sometani Mitsuru², Hosoi Takuji¹, Shimura Takayoshi¹, Watanabe Heiji¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)

11:00 AM - 11:15 AM

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas

〇(P)Atthawut Chanthaphan¹, Yen Hung Cheng¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

〇YOSHIHITO KATSU¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[16a-1A-10] The Gamma-ray Irradiation Effect on SiC-MOSFETs with Various Device Structure

〇satoshi mitomo^1,2, Takuma Matsuda^1,2, Koichi Murata^1,2, Takashi Yokozeki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikirou Kandori³, Toru Yosie³, Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co.)

11:45 AM - 12:00 PM

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama University, 2.JAEA, 3.Sanken Electric Co.)

Session information

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO₂/4H-SiC

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

[16a-1A-5] Oxidation of 4H-SiC by Atmospheric Pressure Thermal-Plasma-Jet

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

[16a-1A-10] The Gamma-ray Irradiation Effect on SiC-MOSFETs with Various Device Structure

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

Authentication

Session information

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on4H-SiC (0001)

△ [16a-1A-4] A study on evaluation technique of SiO2/SiC interface using super-higher-order nonlinear dielectric microscopy

[16a-1A-5] Oxidation of 4H-SiC by Atmospheric Pressure Thermal-Plasma-Jet

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO2/4H-SiC by post-oxidation annealing in pure nitrogen gas

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

[16a-1A-10] The Gamma-ray Irradiation Effect on SiC-MOSFETs with Various Device Structure

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

Authentication

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO₂/4H-SiC

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas