Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-1D-1~12] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 8:45 AM - 12:00 PM 1D (141+142)

座長:小島一信(東北大),石谷善博(千葉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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8:45 AM - 9:00 AM

[16a-1D-1] TEM evaluation on dislocation filtering effect of GaN nanocolumns on GaN/Si substrate

〇(PC)Shunsuke Ishizawa¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech.)

9:00 AM - 9:15 AM

[16a-1D-2] Emission property of flip-chip nanocolumn LED

〇Daishi Fukushima¹, Hiroaki Hayashi¹, Tomohiro Noma¹, Yuta Konno¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

9:15 AM - 9:30 AM

[16a-1D-3] Structural analyze for improving the electrical property of flip-chip nanocolumn LEDs

〇tomohiro noma¹, hiroaki hayashi¹, daishi fukushima¹, ichirou nomura¹, katsumi kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology)

9:30 AM - 9:45 AM

[16a-1D-4] Wide Area Nanotemplate Selective Area Growth of InGaN/GaN Regularly Nanocolumns on Nanoimprint-Patterned AlN/Si Substrates

〇Kouji Yamano¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech Research center)

9:45 AM - 10:00 AM

[16a-1D-5] Dislocation formation of r-plane slip initiating plastic deformation in nano-indentation on bulk GaN surface

〇Toshiya Yokogawa¹, Sachi Niki², Junko Maekawa², Masahiko Aoki² (1.Yamaguchi Univ., 2.Ion Tech. Ctr.)

10:00 AM - 10:15 AM

[16a-1D-6] Theoretical investigations for atomic arrangements around threading screw dislocation cores in nitride semiconductors

〇ryohei sakaguchi¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[16a-1D-7] [Young Scientist Presentation Award Speech] Emission linewidths of site-controlled GaN nanowire quantum dots
~The influence of spectral diffusion~

〇Mark HOLMES¹, Satoshi Kako², Choi Kihyun¹, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (1.NanoQuine, 2.Univ. of Tokyo, IIS)

10:45 AM - 11:00 AM

[16a-1D-8] Evaluation of homogeneous and inhomogeneous linewidth broadening of single GaN interface-fluctuation quantum dots

〇Munetaka Arita¹, Satoshi Kako^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

11:00 AM - 11:15 AM

[16a-1D-9] Optical property of InGaN/GaN single quantum disk nano-pillars fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇(M1)Tomoya Mizutani¹, Ryo Hachiya¹, Kohei Ogawa¹, Shun Ishijima¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Univ. Nano-Tech Research Ctr.)

11:15 AM - 11:30 AM

[16a-1D-10] Fabrication of LED based on regularly arranged thin InGaN nanocolumns

〇Tatsuya Kano¹, Jun Yoshida¹, Rin Miyagawa¹, Naoki Sakakibara¹, Yutaro Mizuno¹, Takao Oto¹, Katsumi Kishino^1,2 (1.Sophia Univ, 2.Sophia Univ. Nanotech. Res. Center)

11:30 AM - 11:45 AM

[16a-1D-11] Period dependence of emission mechanism in InGaN/GaN single quantum wells nanocolumns

〇(M1)Rin Miyagawa¹, Takao Oto¹, Yutaro Mizuno¹, Tatsuya Kano¹, Jun Yoshida¹, Naoki Sakakibara¹, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

11:45 AM - 12:00 PM

[16a-1D-12] Column diameter dependent carrier recombination mechanisms in regularly-arrayed InGaN/GaN nanocolumns

〇(PC)Takao Oto¹, Yutaro Mizuno¹, Rin Miyagawa¹, Tatsuya Kano¹, Jun Yoshida¹, Kazuhiro Ema^1,2, Katsumi Kishino^1,2 (1.Sophia Univ., 2.Sophia Nanotech. Res. Center)

Session information