[16a-2D-1~4] 13.6 Semiconductor English Session

Wed. Sep 16, 2015 9:00 AM - 10:00 AM 2D (212-2)

Chair:Tomo Ueno(TUAT)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

〇(P)WENHSIN CHANG¹, HIROYUKI OTA¹, TATSURO MAEDA¹ (1.AIST)

9:15 AM - 9:30 AM

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

Krzysztof Tyszka^1,2, 〇Daniel Moraru³, Arup Samanta¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Warsaw Univ. Tech., 3.Shizuoka Univ.)

9:30 AM - 9:45 AM

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

Cyril Sadia¹, 〇(D)Elmer Estacio¹ (1.National Institute of Physics, University of the Philippines Diliman)

9:45 AM - 10:00 AM

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

〇(PC)Samanta Arup¹, Moraru Daniel², Yuki Takasu¹, Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ, 2.Faculty Eng, Shizuoka Univ)

Session information

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

Authentication

Session information

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-clusterin narrow channel SOI-FETs

Authentication

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs