[16a-2D-1~4] 13.6 Semiconductor English Session

2015年9月16日(水) 09:00 〜 10:00 2D (212-2)

Chair:Tomo Ueno(TUAT)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

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09:00 〜 09:15

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

〇(P)WENHSIN CHANG¹, HIROYUKI OTA¹, TATSURO MAEDA¹ (1.AIST)

09:15 〜 09:30

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

Krzysztof Tyszka^1,2, 〇Daniel Moraru³, Arup Samanta¹, Takeshi Mizuno¹, Ryszard Jablonski², Michiharu Tabe¹ (1.RIE, Shizuoka Univ., 2.Warsaw Univ. Tech., 3.Shizuoka Univ.)

09:30 〜 09:45

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

Cyril Sadia¹, 〇(D)Elmer Estacio¹ (1.National Institute of Physics, University of the Philippines Diliman)

09:45 〜 10:00

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

〇(PC)Samanta Arup¹, Moraru Daniel², Yuki Takasu¹, Takeshi Mizuno¹, Michiharu Tabe¹ (1.RIE, Shizuoka Univ, 2.Faculty Eng, Shizuoka Univ)

セッション情報

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs

認証

セッション情報

[16a-2D-1~4] 13.6 Semiconductor English Session

▲ [16a-2D-1] Effective reduction of parasitic resistance in Ge p-MOSFETs by ion implantation after germanidation technique

▲ [16a-2D-2] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom transistors

▲ [16a-2D-3] Investigation on terahertz radiation from p-InAs epilayer grown on n-GaSb

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-clusterin narrow channel SOI-FETs

認証

▲ [16a-2D-4] High-temperature single-electron tunneling transport through dopant-cluster
in narrow channel SOI-FETs