Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[16a-2E-1~9] 3.13 Semiconductor optical devices

Wed. Sep 16, 2015 10:00 AM - 12:15 PM 2E (221-1)

座長:尾崎信彦(和歌山大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl₂O₄:Eu Single Crystals Excited by Ultraviolet Light

〇Mamoru Kitaura¹, Yuta Tsurumi¹, Akimasa Ohnishi¹, Tomoya Ishibashi², Shoko Furukawa², Hisaya Oda², Akio Yamanaka² (1.Yamagata Univ., 2.Chitose Institute of Science and Technology)

10:15 AM - 10:30 AM

[16a-2E-2] Enhancement of Nonlinear Optical Signal Using Ultrashort-pulse Excitation in CuCl High-quality Thin Films

〇Masayoshi Ichimiya^1,2, Subaru Saeki², Takayuki Umakoshi², Takashi Kinoshita³, Hajime Ishihara³, Masaaki Ashida² (1.Univ. of Shiga Pref., 2.Osaka Univ., 3.Osaka Pref. Univ.)

10:30 AM - 10:45 AM

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

〇(P)Neul Ha¹, Takaaki Mano¹, Takashi Kuroda¹, Shun-Jen Cheng², Paul M. Koenraad³, Akihiro Ohtake¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS, 2.NCTU-ROC, 3.TU Eindhoven)

10:45 AM - 11:00 AM

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

〇(M2)Koh Chieda¹, Baifu Zhang¹, Takuya Okimoto¹, Takuo Tanemura¹, Yoshiaki Nakano¹ (1.Univ.of Tokyo)

11:00 AM - 11:15 AM

[16a-2E-5] Approximate solutions of resonator modes corresponding to stable periodic orbits in a Penrose cavity

〇Takehiro Fukushima¹, Takao Sarata¹, Koichiro Sakaguchi¹, Yasunori Tokuda¹ (1.Okayama Pref. Univ.)

11:15 AM - 11:30 AM

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL

〇(M2)Shouhei Moriwaki¹, Minoru Saitou¹, Shougo Kunisada¹, Tomoyuki Miyamoto¹ (1.Tokyo Inst.)

11:30 AM - 11:45 AM

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

〇(M1)Hiroto Ota¹, Tomohisa Maekawa¹, Xiangmeng Lu¹, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (1.Tokushima Univ.)

11:45 AM - 12:00 PM

[16a-2E-8] Transverse-mode coupled cavity VCSELs with high speed beam switching

〇Masanori Nakahama¹, Xiaodong Gu¹, Takahiro Sakaguchi¹, Akihiro Matsutani², Fumio Koyama¹ (1.Tokyo Tech., 2.MEMS process, Tokyo Tech.)

12:00 PM - 12:15 PM

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

〇(PC)XIAODONG GU¹, MASANORI NAKAHAMA¹, AKIHIRO MATSUTANI², FUMIO KOYAMA¹ (1.P&I Lab. Tokyo Tech., 2.Tech. Depart. Tokyo Tech.)

Session information

[16a-2E-1~9] 3.13 Semiconductor optical devices

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl₂O₄:Eu Single Crystals Excited by Ultraviolet Light

[16a-2E-2] Enhancement of Nonlinear Optical Signal Using Ultrashort-pulse Excitation in CuCl High-quality Thin Films

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

[16a-2E-5] Approximate solutions of resonator modes corresponding to stable periodic orbits in a Penrose cavity

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

[16a-2E-8] Transverse-mode coupled cavity VCSELs with high speed beam switching

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

Authentication

Session information

[16a-2E-1~9] 3.13 Semiconductor optical devices

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl2O4:Eu Single Crystals Excited by Ultraviolet Light

[16a-2E-2] Enhancement of Nonlinear Optical Signal Using Ultrashort-pulse Excitation in CuCl High-quality Thin Films

▲ [16a-2E-3] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy

△ [16a-2E-4] Design of Metallic-Cavity Optical Modulator integrated on InP waveguide

[16a-2E-5] Approximate solutions of resonator modes corresponding to stable periodic orbits in a Penrose cavity

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing methodfor application to carrier confinement of VCSEL

△ [16a-2E-7] Lasing of Two-Color Surface Emitting Laser by Coupled Cavity Structure with QW

[16a-2E-8] Transverse-mode coupled cavity VCSELs with high speed beam switching

▲ [16a-2E-9] First Demonstration of 850 nm Transverse Coupled Cavity Vertical Cavity Surface-Emitting Laser

Authentication

[16a-2E-1] Infrared Absorption Spectroscopy for Electron Traps in SrAl₂O₄:Eu Single Crystals Excited by Ultraviolet Light

△ [16a-2E-6] Characterization of ion implantation quantum well intermixing method
for application to carrier confinement of VCSEL