[16a-2R-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 2R (231-2)

座長:末益崇(筑波大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-2R-1] Preparation of Fe₃Si/FeSi₂/FeSi₃ Spin Valve Films

Kazuya Ishibashi¹, Yuki Asai¹, Kazutoshi Nakashima¹, Ken-ichiro Sakai², 〇Tsuyoshi Yoshitake¹ (1.Kyushu Univ., 2.Kurume NCT)

9:15 AM - 9:30 AM

[16a-2R-2] High Density Formation of Fe-silicide Nanodots Induced by Remote H₂ Plasma and Characterization of Their Crystalline Structure and Magnetic Properties

〇Hai Zhang¹, Katsunori Makihara¹, Akio Ohta¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:30 AM - 9:45 AM

[16a-2R-3] Study of thermal stability of Fe₃Si /Si(111) heterointerfaces

〇Yoshihito Maeda^1,2, Yuki Kawakubo¹, Yoshikazu Terai¹, Kazumasa Narumi², Seiji Sakai² (1.Kyutech, 2.JAEA)

9:45 AM - 10:00 AM

[16a-2R-4] Ion beam analysis of oxidation behavior of β-FeSi₂/Si

〇Yoshihito Maeda^1,2, Yuya Noguchi¹, Yoshikazu Terai¹, Kazumasa Narumi², Seiji Sakai² (1.Kyutech, 2.JAEA)

10:00 AM - 10:15 AM

[16a-2R-5] Photoluminescence properties of N-doped β-FeSi₂ films

〇Kensuke Akiyama^1,2, Ryo Takahashi¹, Yoshihisa Matsumoto¹, Hiroshi Funakubo² (1.Kanagawa Indu. Tech. Cent., 2.Tokyo Inst. Tech.)

Break (10:15 AM - 10:30 AM)

10:30 AM - 10:45 AM

[16a-2R-6] Development of Spectrally-Selective Infrared Emitters having High Selectivity with FeSi₂/W Thin Film

〇Shoma Masunaka¹, Kensuke Nishiura¹, Kyoko Namura¹, Motofumi Suzuki¹ (1.Kyoto Univ.)

10:45 AM - 11:00 AM

[16a-2R-7] Transport properties of β-FeSi₂ polycrystalline films (II)

〇Takahiko Higashi¹, Tetsu Hattori¹, Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyusyu Inst. of Tech.)

11:00 AM - 11:15 AM

[16a-2R-8] Activation processes of impurities in B-doped β-FeSi₂ polycrystalline thin films

〇Tetsu Hattori¹, Yusuke Mimura¹, Takahiko Higashi¹, Haruki Yamaguchi¹, Yoshikazu Terai^1,2 (1.Kagoshima Univ., 2.Kyushu Inst. of Tech.)

11:15 AM - 11:30 AM

[16a-2R-9] Thermal Expansion of beta-FeSi₂ and Mg₂Si

〇Motoharu Imai¹, Yukihiro Isoda¹, Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

11:30 AM - 11:45 AM

[16a-2R-10] Fabrication and electrical properties of mesa-structured Mg₂Si pn-junction diode

〇tomohiro akiyama¹, nobuhiko hori¹, haruhiko udono¹ (1.Ibaraki Univ.)

11:45 AM - 12:00 PM

△ [16a-2R-11] Preparation of Ca-Mg-Si Films by Sputtering Method and Their Properties

〇Mutsuo Uehara¹, Mao Kurokawa¹, Kensuke Akiyama^1,2, Masaaki Matsushima¹, HIroshi Uchida³, Yoshisato Kimura¹, Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Kanagawa Industrial Technology Center, 3.Sophia Univ.)

Session information