Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16a-4C-1~11] 13.8 Compound and power electron devices and process technology

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 4C (432)

座長:東脇正高(NICT)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-4C-1] Evaluation of annealing on electrical properties of GaAs/GaAs bonding interfaces

〇Li Chai¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

9:15 AM - 9:30 AM

[16a-4C-2] Fabrication and characterization of GaAs/4H-SiC heterojunction using low temperature bonding

〇(M1)SAE SHIMIZU¹, JIANBO LIANG¹, MANABU ARAI², NAOTERU SHIGEKAWA¹ (1.Osaka City Univ., 2.New Japan Radio Co., Ltd.)

9:30 AM - 9:45 AM

△ [16a-4C-3] AlAs/InGaAs double barrier p-i-n junction diode for Superlattice FET

〇Atsushi Yukimachi¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

9:45 AM - 10:00 AM

[16a-4C-4] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (1)

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

10:00 AM - 10:15 AM

[16a-4C-5] An initial failure analysis of the low breakdown voltage of GaN p-n diodes fabricated on free-standing GaN substrates (2)

〇Yoshinobu Narita¹, Fumimasa Horikiri¹, Takehiro Yoshida¹, Hiroshi Ohta², Tomoyoshi Mishima², Tohru Nakamura² (1.Sciocs, 2.Hosei Univ.)

10:15 AM - 10:30 AM

[16a-4C-6] 4.7 kV breakdown voltage GaN p-n diodes fabricated on free-standing GaN substrates

Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshimobu Narita³, Takehiro Yoshida³, 〇Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hoesi Univ., 2.Quantum Spread, 3.Sciocs)

Break (10:30 AM - 10:45 AM)

10:45 AM - 11:00 AM

[16a-4C-7] Forward current characteristics on sizes of mesa in vertical GaN p-n diodes

〇sho kanazawa¹, Hiroshi Ohta¹, Naoki Kaneda², Fumimasa Horikiri³, Yoshinobu Narita³, Takehiro Yoshida³, Tomoyoshi Mishima¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Quantum Spread, 3.Sciocs)

11:00 AM - 11:15 AM

△ [16a-4C-8] Steady State Photo Capacitance Spectroscopy in Gallium Nitride Grown via MOHVPE

〇Manato Deki¹, Zheng Ye¹, Yoshio Honda¹, Hiroshi Amano^1,2 (1.Nagoya Univ., 2.A.R.C)

11:15 AM - 11:30 AM

[16a-4C-9] Hall-effect measurement of lightly-doped p-type homoepitaxial GaN

〇Masahiro Horita¹, Shinya Takashima², Ryo Tanaka², Katsunori Ueno², Masaharu Edo², Jun Suda¹ (1.Kyoto Univ., 2.Fuji Electric)

11:30 AM - 11:45 AM

[16a-4C-10] Relationship between AlN layer and vertical breakdown voltage
of AlGaN/GaN HEMT on Si substrate

〇KAZUHIRO ITOU¹, YUYA YAMAOKA^1,2, TAKASHI EGAWA¹, AKINORI UBUKATA², TOSHIYA TABUTI², KOH MATSUMOTO² (1.Nagoya Inst, 2.Taiyo Nissan)

11:45 AM - 12:00 PM

[16a-4C-11] AlGaN/GaN HEMT Properties on 200mm Si Wafer by Fast Rotating Single-Wafer MOCVD

〇Kiyotaka Miyano¹, Yasushi Iyechika¹, Hideshi Takahashi¹, Yusuke Sato¹, Shinichi Mitani¹ (1.Nuflare Technology)

Session information