Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16p-1D-1~14] 15.4 III-V-group nitride crystals

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 1D (141+142)

座長:山田陽一(山口大),上山智(名城大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[16p-1D-1] Localized Carrier Dynamics in Regularly-Arrayed InGaN/GaN Nanocolumns

〇Kazuya Kinjo¹, Yuta Inose¹, Naoki Shimosako¹, Hikaru Sato¹, Kazuhiro Ema^1,2, Takao Oto¹, Katsumi Kishino^1,2 (1.Sophia University, 2.Sophia Nanotechnology Research Center)

1:30 PM - 1:45 PM

[16p-1D-2] Optical Polarization Properties of Nonpolar InGaN films Measured by Photoluminescence Excitation Spectroscopy

〇(M2)RYOHEI MAEDA¹, SHIGETA SAKAI¹, ATSUSHI A. YAMAGUCHI¹, KAORI KURIHARA², SATORU NAGAO² (1.Kanazawa Inst. of Tech., 2.Mitsubishi Chemical Corp.)

1:45 PM - 2:00 PM

△ [16p-1D-3] Possible Origin of Double-Peak Emission in m-plane InGaN Quantum Wells

〇Shigeta Sakai¹, Atsushi Yamaguchi¹, Kaori Kurihara², Satoru Nagao² (1.Kanazawa Inst. of Tech., 2.Mitsubishi Chemical Corp.)

2:00 PM - 2:15 PM

[16p-1D-4] Study on Junction leakage Currents and Deep Levels in InGaN Solar Cells

〇Daichi Imai^1,2, Kazuhide Kusakabe^1,2, Ke Wang^1,2, Akihiko Yoshikawa^1,2,3 (1.SMART, Chiba Univ., 2.JST-ALCA, 3.Kogakuin Univ.)

2:15 PM - 2:30 PM

[16p-1D-5] Radiation dynamics of free and donor-bound excitons in high-quality bulk GaN

〇Kazunobu Kojima¹, Makoto Saito^1,2, Hirotaka Ikeda², Kenji Fujito², Shigefusa Chichibu¹ (1.Tohoku University, 2.Mitsubishi Chemical Corp.)

2:30 PM - 2:45 PM

[16p-1D-6] Investigation of stability of optical sites for Eu- and Mg-codoped GaN

〇Hiroki Tateishi¹, Hiroto Sekiguchi¹, Keisuke Yamane¹, Hiroshi Okada^2,1, Akihiro Wakahara^1,2 (1.Toyohashi Univ.Tech., 2.EIIRIS)

2:45 PM - 3:00 PM

[16p-1D-7] Growth of Eu doped GaN nanocolumns grown by rf-plasma-assisted molecular beam epitaxy

〇Satoshi Nishikawa¹, Sekiguchi Hiroto¹, Imanishi Tomohiko¹, Yamane Keisuke¹, Okada Hiroshi^2,1, Kishino Katsumi³, Wakahara Akihiro^1,2 (1.Toyohashi Univ.Tech., 2.EIIRIS, 3.Sophia Univ.)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[16p-1D-8] Phonon-carrier dynamics simulation of GaN material

〇Bei Ma¹, Kazuma Takeuchi¹, Tomohiro Iwahori¹, Hideto Miyake², Kazamasa Hiramatsu², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Mie Univ.)

3:30 PM - 3:45 PM

[16p-1D-9] Depth profile characteristic evaluation technique of electron in GaN films by infrared reflection spectra

〇Takaaki Kamijoh¹, Bei Ma¹, Ken Morita¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

3:45 PM - 4:00 PM

[16p-1D-10] Non-radiative recombination process in GaN substrates and heteroepitaxial films studied by transient lens method

〇(M2)Masahiro Tsukamoto¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

▲ [16p-1D-11] Growth and Optical Properties of AlN/AlGaN Heterostructures on Patterned Si Substrate

〇(P)Tinh Tran¹, Noritoshi Maeda¹, Masafumi Jo¹, Hideki Hirayama¹ (1.RIKEN)

4:15 PM - 4:30 PM

[16p-1D-12] Linewidth analysis of intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

〇Teruhisa Kotani^1,2,3, Munetaka Arita¹, Yasuhiko Arakawa^1,2 (1.Nano Quine, 2.IIS Univ. of Tokyo, 3.SHARP)

4:30 PM - 4:45 PM

[16p-1D-13] Improvement of the Efficiency of AlGaN-based Deep UV LED

〇Tetsuhiko Inazu¹, Noritaka Niwa¹, Hiroyasu Ichinokura², Cyril Pernot¹, Hideki Asano², Hidemasa Tomozawa¹, Hisanori Ishiguro², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴ (1.Nikkiso Co., Ltd., 2.Nikkiso Giken Co., Ltd., 3.Nagoya Univ., 4.Meijo Univ.)

4:45 PM - 5:00 PM

[16p-1D-14] Well width dependence of biexciton binding energy in AlGaN-based quantum wells (2)

Katsuto Nakamura¹, Taira Izumi¹, Shumpei Fukuchi¹, Satoshi Kurai¹, Hideto Miyake², Kazumasa Hiramatsu², 〇Yoichi Yamada¹ (1.Yamaguchi Univ., 2.Mie Univ.)

Session information