Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Wed. Sep 16, 2015 1:15 PM - 5:00 PM 2D (212-2)

座長:嵯峨幸一郎(ソニー),森伸也(阪大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[16p-2D-1] Development of Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis

〇YOHEI HAYASE¹, KEIRYO HARA¹, SHINSUKE OGATA¹, LI ZHANG², HARUKO AKUTSU¹ (1.S&S Co. Toshiba Corp., 2.R&D Center Toshiba Corp.)

1:30 PM - 1:45 PM

[16p-2D-2] Effect of sample surface protection layer on SSRM measurements

〇Jun Yoshigiwa¹, Masanaga Fukasawa¹, Takuya Ito¹, Keiji Ohshima¹, Koichiro Saga¹ (1.Sony Corp.)

1:45 PM - 2:00 PM

[16p-2D-3] Organic Molecules Interaction Evaluated Using Quartz Crystal Microbalance

Jaeha Choi¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

2:00 PM - 2:15 PM

[16p-2D-4] Water Exhaust Design for Batch-type Silicon Wafer Wet Cleaner

Nobutaka Ono¹, 〇shogo okuyama¹, Kento Miyazaki¹, Hitoshi Habuka¹, Akihiro Goto² (1.Yokohama Nat. Univ., 2.Pre-Tech)

2:15 PM - 2:30 PM

[16p-2D-5] Flattening of Ge Surfaces by Catalytic Metals to Enhance O₂ Reduction Reactions in Water

〇Kenta Arima¹, Tatsuya Kawase¹, Yusuke Saito¹, Kentaro Kawai¹, Yasuhisa Sano¹, Kazuto Yamauchi¹, Mizuho Morita¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

〇(D)Sohya Kudoh¹, Nithi Atthi¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Break (2:45 PM - 3:00 PM)

3:00 PM - 3:15 PM

[16p-2D-7] Electronic structure calculation of Si polymorphs by TE-TB method

〇Shinya Nishino¹, Takeo Fujiwara², Susumu Yamamoto³, Takashi Suzuki¹, Minoru Ikeda⁴, Yasuaki Ohtani¹ (1.ARGO GRAPHICS Inc., 2.The University of Tokyo, 3.Tokyo University of Technology,, 4.NIMS)

3:15 PM - 3:30 PM

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

〇Motohiro Tomita^1,2,3, Ogura Atsushi², Takanobu Watanabe¹ (1.Waseda Univ., 2.Meiji Univ., 3.JSPS Res. Fellow PD)

3:30 PM - 3:45 PM

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

〇(D)Shuichiro Hashimoto¹, Takanobu Watanabe¹ (1.Waseda Univ.)

3:45 PM - 4:00 PM

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film

〇ryuta koide¹, kousuke shimura¹, shuichiro hashimoto¹, motohiro tomita^1,2,3, takanobu watanabe¹ (1.Waseda Univ., 2.Meiji Univ., 3.JSPS Research Fellow PD)

4:00 PM - 4:15 PM

[16p-2D-11] Ballistic Thermal Transport by Acoustic Phonons in Corrugated Silicon Nanowires

〇Junichi Hattori¹, Vladimir Poborchii¹, Tetsuya Tada¹ (1.AIST)

4:15 PM - 4:30 PM

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

〇Hajime Tanaka¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

[16p-2D-13] Carrier Mobility Evaluated from Various Discrete Dopant Models in Drift-Diffusion Simulations

〇(M2)kazusa inoue¹, Min Chong Lim¹, Akiko Ueda¹, Nobuyuki Sano¹ (1.Tsukuba Univ.)

4:45 PM - 5:00 PM

[16p-2D-14] Examination of Boundary Condition Exchange Method for Domain Division Analysis of Large Scale Semiconductor Devices

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Jun Komachi¹, Hiroyuki Ito¹, Shohiro Sho², Shinji Odanaka², Hiroo Koshimoto³, Tsutomu Ikegami³, Koichi Fukuda³ (1.STARC, 2.Osaka Univ., 3.AIST)

Session information

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[16p-2D-1] Development of Scanning Spreading Resistance Microscopy (SSRM) to Failure Analysis

[16p-2D-2] Effect of sample surface protection layer on SSRM measurements

[16p-2D-3] Organic Molecules Interaction Evaluated Using Quartz Crystal Microbalance

[16p-2D-4] Water Exhaust Design for Batch-type Silicon Wafer Wet Cleaner

[16p-2D-5] Flattening of Ge Surfaces by Catalytic Metals to Enhance O₂ Reduction Reactions in Water

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

[16p-2D-7] Electronic structure calculation of Si polymorphs by TE-TB method

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film

[16p-2D-11] Ballistic Thermal Transport by Acoustic Phonons in Corrugated Silicon Nanowires

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

[16p-2D-13] Carrier Mobility Evaluated from Various Discrete Dopant Models in Drift-Diffusion Simulations

[16p-2D-14] Examination of Boundary Condition Exchange Method for Domain Division Analysis of Large Scale Semiconductor Devices

Authentication

Session information

[16p-2D-1~14] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [16p-2D-6] Annealing condition dependence of Si surface flattening process

△ [16p-2D-8] Molecular Dynamics Study on Interatomic Potential in SiGe with Using Molecular Orbital Method

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO2 Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO2 Film

△ [16p-2D-12] Appearance of negative differential resistance in high-field hole transport in Ge nanowires

Authentication

△ [16p-2D-9] Development of Dynamic-Bond-Order Potential for SiC/SiO₂ Interface Modeling

△ [16p-2D-10] Molecular Dynamics Study of Thermal Conductivity and Phonon Dispersion in Ge Nanowire Covered with GeO₂ Film