[16p-2E-1~9] 3.13 Semiconductor optical devices

Wed. Sep 16, 2015 1:45 PM - 4:30 PM 2E (221-1)

座長:丸山武男(金沢大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:15 PM

[16p-2E-1] [JSAP Paper Award Speech] Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

〇Kazunori Shinoda¹, Koichiro Adachi¹, Yong Lee¹, Takeshi Kitatani¹, Toshihiko Fukamachi¹, Hiroki Yamashita¹, Takashi Takemoto¹, Fumio Yuuki¹, Toshiki Sugawara¹, Shigehisa Tanaka¹, Shinji Tsuji¹ (1.Hitachi, Ltd.)

2:15 PM - 2:30 PM

[16p-2E-2] Dependence of Laser Characteristics on Facet Phases of Resonance-Shifted DFB-LD

〇(M2)Keiichiro Ichikawa¹, Takahiro Numai¹ (1.Ritsumeikan Univ.)

2:30 PM - 2:45 PM

[16p-2E-3] Lasing Characteristics of 1.3-μm npn-AlGaInAs/InP Transistor Laser
with Thinned p-GaInAsP Base Layer

〇shoutarou tadano¹, Takumi Yoshida¹, Takaaki Kaneko¹, Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (1.Tokyo Inst., 2.QNERC)

2:45 PM - 3:00 PM

△ [16p-2E-4] Integration of GaInAsP-InP double-hetero laser on wafer bonded InP/Si substrate using MOVPE

〇Keiichi Matsumoto¹, Yoshinori Kanaya¹, Junya Kishikawa¹, Yuta Yamamoto¹, Toshiki Sukigara¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Break (3:00 PM - 3:15 PM)

3:15 PM - 3:30 PM

[16p-2E-5] Stability of Temperature Characteristics in External Cavity Quantum Dot Comb Laser

〇Nami Yasuoka¹, Ishida Mitsuru², Yamaguchi Masaomi², Uetake Ayahito², Takemoto Kazuya², Yamamoto Tuyoshi², Arakawa Yasuhiko¹ (1.INQIE, Univ. of Tokyo, 2.Fujitsu Labs.)

3:30 PM - 3:45 PM

[16p-2E-6] Effect on High Frequency Characteristics by Thinner Barrier Layer in GaP Strain-Compensated InAs/GaAs Quantum Dot Laser

〇Takeo Kageyama¹, Katsuyuki Watanabe², Vo Quoc Huy², Keizo Takemasa³, Mitsuru Sugawara³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.QD Laser)

3:45 PM - 4:00 PM

[16p-2E-7] Accepter concentration dependency of modulation doped InAs/InP double capped quantum dots structure

〇(M2)Toshiki Sukigara¹, Yuta Yamamoto¹, Tetsuo Nishiyama¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

4:00 PM - 4:15 PM

[16p-2E-8] Optical gain measurements by the segmented contact method for a broadband SLD including multiple InAs quantum dots with controlled emission wavelengths

〇Nobuhiko Ozaki^1,2, David Childs¹, Takuma Yasuda², Hirotaka Ohsato³, Eiichiro Watanabe³, Naoki Ikeda³, Yoshimasa Sugimoto³, Richard Hogg¹ (1.Univ. Sheffield, 2.Wakayama Univ., 3.NIMS)

4:15 PM - 4:30 PM

[16p-2E-9] Quantum dot optical gain modulator integrated with semiconductor optical amplifier for T-Band Optical Communication

〇Toshifumi Emori^1,2, Naokatsu Yamamoto¹, Kouichi Akabane¹, Toshimasa Umezawa¹, Atsushi Matsumoto¹, Tetsuya Kawanishi^1,3, Katsuki Watanabe^1,2, Hiroshi Takai² (1.NICT, 2.Denki Univ., 3.Waseda Univ.)

Session information