Oral presentation

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[16p-2Q-1~13] 8.3 deposition of thin film and surface treatment

Wed. Sep 16, 2015 1:45 PM - 5:00 PM 2Q (231-1)

座長:荻野明久(静岡大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

[16p-2Q-1] Diamond growth with pulsed-microwave plasma chemical vapor deposition

〇Hideaki Yamada¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

2:00 PM - 2:15 PM

△ [16p-2Q-2] Effect of blowing source gas in DLC coating on inner surface of narrow tube by MVP method

〇YOSHIHIKO HAGIYAMA¹, Hiroyuki Kousaka¹, Noritsugu Umehara¹ (1.Nagoya Univ.)

2:15 PM - 2:30 PM

△ [16p-2Q-3] Preparation of Ti-DLC and Si-DLC films by reactive HiPIMS with positive and negative pulse bias system

〇Hikaru Kamata¹, Takashi Kimura¹, Setsuo Nakao², Tsutomu Sonoda², Takeshi Kusumori², Kimihiro Ozaki², Kingo Azuma³ (1.Nagoya Inst. of Tech., 2.AIST, 3.Univ. of Hyogo)

2:30 PM - 2:45 PM

△ [16p-2Q-4] Properties of high power pulsed sputtering with facing targets

〇Toshihiko Mishima¹, Takashi Kimura¹, Kingo Azuma², Setsuo Nakao³ (1.Nagoya Inst. of Tech., 2.Univ. of Hyogo, 3.AIST)

2:45 PM - 3:00 PM

[16p-2Q-5] DLC On-site Deposition by Atmospheric-Pressure μPlasma

〇Hiroyuki Yoshiki¹, Ryo Yagyu¹ (1.Tsuruoka National College of Tech.)

3:00 PM - 3:15 PM

[16p-2Q-6] Large area hydrogen free SiNx thin film deposition by ICP-CVD

〇EIJI TAKAHASHI¹, SYUNJI TAKASE¹, MASAMITSU TORAMARU², TORU MASHITA² (1.Nissin Electric, 2.The Japan Steel Works)

3:15 PM - 3:30 PM

[16p-2Q-7] a-SiN thin films prepared by the RF sputtering system assisted by inductively coupled plasma

〇Yuki Ishii¹, Tetsuya Kaneko¹, Kunio Okimura¹, Haruo Shindo¹, Masao Isomura¹ (1.Tokai Univ.)

3:30 PM - 3:45 PM

[16p-2Q-8] Effects of H2 dilution on Incorporation Amount of Clusters in A-Si:H Films Deposited by Multi-Hollow Discharge Plasma CVD

〇Susumu Toko¹, Yoshihiro Torigoe¹, Kimitaka Keya¹, Hyunwoong Seo¹, Naho Itagaki¹, Kazunori Koga¹, Masaharu Shiratani¹ (1.Kyushu University)

3:45 PM - 4:00 PM

△ [16p-2Q-9] Effect of sample cooling in nitriding of SiC surface using a remote nitrogen plasma

〇masaharu shimabayashi¹, kazuaki kurihara², koichi sasaki¹ (1.Hokkaido Univ., 2.Research & Development Center, Toshiba Corp.)

4:00 PM - 4:15 PM

[16p-2Q-10] Nitriding of die steel inner of high aspect ratio using intense nitrogen ion beam

〇Yasuhiro Hara¹, Tamio Hara^1,2 (1.Plasma R&D Lab. Co., Ltd, 2.Toyota Tech Inst.)

4:15 PM - 4:30 PM

△ [16p-2Q-11] Investigation and control of non-uniform hardening in atmospheric-pressure plasma nitro-quenching

〇Masaki Mitani¹, Ryuta Ichiki¹, Takashi Inoue¹, Yutaro Iwakiri¹, Shuichi Akamine¹, Seiji Kanazawa¹ (1.Oita Univ.)

4:30 PM - 4:45 PM

[16p-2Q-12] Evaluation of plasma uniformity with wafer type plasma indicator

〇YU YAMAKAWA¹, KEITA HISHIKAWA¹, HIROKAZU MIYAZAKI¹, KEIKO NAKAMURA¹, KAZUHIRO UNEYAMA¹ (1.Sakura Color Products Corp.)

4:45 PM - 5:00 PM

[16p-2Q-13] Hydrophilzation of acrylic resin・polycarbonate surface using Inward-plasma

〇ryou Kanou¹, Ryouhei Satou¹, Hiroshi Suga¹, Satoshi Takahashi², Yuya Shirayama², Shun'ichiro Shimbori², Norimichi Watanabe³, Tetsuo Shimizu⁴ (1.CIT, 2.Sunyou Co.,Ltd., 3.NIMS, 4.AIST)

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