[16p-2T-1~7] 17.2 Structure control and process

Wed. Sep 16, 2015 1:00 PM - 2:45 PM 2T (232)

座長:日比野浩樹(関西学院大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)

〇(M2)atsushi masumori¹, Wataru Norimatsu¹, Michiko Kusunoki^1,2 (1.Nagoya Univ., 2.Nagoya Univ. EcoTopia)

1:15 PM - 1:30 PM

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO₂/Si

〇(M2)Nariaki Yurugi¹, Fjio Wakaya¹, Satoshi Abo¹, Hayato Yamashita¹, Masayuki Abe¹, Mikio Takai¹ (1.Osaka Univ)

1:30 PM - 1:45 PM

[16p-2T-3] Influence of Graphene Crystals Structures on Hydrogen Induced Anisotropic Etching Process

〇KALITA GOLAP¹, REMI PAPON¹, AMUTHA THANGARAJA¹, MASAKI TANEMURA¹ (1.Nagoya Inst Technol.)

1:45 PM - 2:00 PM

[16p-2T-4] Reduction of Graphene Oxide by Thermal-assisted VUV Photochemical Reaction

〇(D)Yudi Tu¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

[16p-2T-5] Increasing Homogeneity of Reduced Graphene Oxide and Ag Nanowire Films

〇Katsuyuki Naito¹, Norihiro Yoshinaga¹, Yoshihiro Akasaka¹ (1.Toshiba R&D Center)

2:15 PM - 2:30 PM

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

〇(DC)Miho Fujihara¹, Shun Ogawa², Ryosuke Inoue², Kenji Watanabe³, Takashi Taniguchi³, Hisanori Shinohara¹, Yasumitsu Miyata^2,4 (1.Nagoya Univ., 2.Tokyo Metro. Univ., 3.NIMS, 4.JST-PRESTO)

2:30 PM - 2:45 PM

[16p-2T-7] Preparation of CVD graphene/boron nitride heterostructures by metal-melting transfer

〇Ryosuke Inoue¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO)

Session information

[16p-2T-1~7] 17.2 Structure control and process

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO₂/Si

[16p-2T-3] Influence of Graphene Crystals Structures on Hydrogen Induced Anisotropic Etching Process

[16p-2T-4] Reduction of Graphene Oxide by Thermal-assisted VUV Photochemical Reaction

[16p-2T-5] Increasing Homogeneity of Reduced Graphene Oxide and Ag Nanowire Films

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

[16p-2T-7] Preparation of CVD graphene/boron nitride heterostructures by metal-melting transfer

Authentication

Session information

[16p-2T-1~7] 17.2 Structure control and process

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B4C Thin Film on SiC(000-1)

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO2/Si

[16p-2T-3] Influence of Graphene Crystals Structures on Hydrogen Induced Anisotropic Etching Process

[16p-2T-4] Reduction of Graphene Oxide by Thermal-assisted VUV Photochemical Reaction

[16p-2T-5] Increasing Homogeneity of Reduced Graphene Oxide and Ag Nanowire Films

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

[16p-2T-7] Preparation of CVD graphene/boron nitride heterostructures by metal-melting transfer

Authentication

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO₂/Si