Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

Wed. Sep 16, 2015 1:30 PM - 3:45 PM 4C (432)

座長:末光哲也(東北大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

〇Masato Shingo¹, Jianbo Liang², Naoteru Shigekawa², Manabu Arai³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.Osaka City Univ., 3.New Japan Radio)

1:45 PM - 2:00 PM

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF₆

〇(M1)koki tajiri¹, yuki inoue¹, yasuhisa sano¹, satoshi matsuyama¹, kazuto yamauchi¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[16p-4C-3] First-plinciple calculations for a mechanism of carbon annihilation during the SiC oxidation

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO₂ molecular doping

〇(M1)Yuta Koga¹, Kazuya Harada¹, Kenji Hanada¹, Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ.)

2:30 PM - 2:45 PM

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga₂O₃ Layers by HVPE

〇Kazushiro Nomura¹, Ken Goto^1,2, Kohei Sasaki^2,3, Quang Tu Thieu^1,4, Rie Togashi¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Bo Monemar^4,5, Akinori Koukitu¹ (1.TUAT, 2.Tamura Corp., 3.NICT, 4.TUAT GIRO, 5.Linkoping Univ)

2:45 PM - 3:00 PM

[16p-4C-6] Ga₂O₃ Schottky Barrier Diodes with Drift Layers Grown by HVPE

〇Masataka Higashiwaki¹, Kohei Sasaki^2,1, Keita Konishi¹, Ken Goto², Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi² (1.NICT, 2.Tamura Corp., 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

3:00 PM - 3:15 PM

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

〇Keita Konishi¹, Kohei Sasaki^2,1, Ken Goto^2,3, Kazushiro Nomura³, Quang Tu Thieu^3,4, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp., 3.TUAT, 4.TUAT GIRO, 5.Linkoping Univ.)

3:15 PM - 3:30 PM

[16p-4C-8] β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

〇Kohei Sasaki^1,2, Masataka Higashiwaki², Ken Goto¹, Kazushiro Nomura³, Quang Tu Thieu⁴, Rie Togashi³, Hisashi Murakami³, Yoshinao Kumagai³, Bo Monemar^4,5, Akinori Koukitu³, Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp., 2.NICT, 3.Tokyo Univ. of Agri. & Tech., 4.TUAT GIRO, 5.Linkoping Univ.)

3:30 PM - 3:45 PM

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

〇ManHoi Wong¹, Kohei Sasaki^2,1, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Session information

[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF₆

[16p-4C-3] First-plinciple calculations for a mechanism of carbon annihilation during the SiC oxidation

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO₂ molecular doping

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga₂O₃ Layers by HVPE

[16p-4C-6] Ga₂O₃ Schottky Barrier Diodes with Drift Layers Grown by HVPE

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

[16p-4C-8] β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors

Authentication

Session information

[16p-4C-1~9] 13.8 Compound and power electron devices and process technology

△ [16p-4C-1] Mapping of Si/SiC hetero p-n junctions by using scanning internal photoemission microscopy

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF6

[16p-4C-3] First-plinciple calculations for a mechanism of carbon annihilation during the SiC oxidation

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO2 molecular doping

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga2O3 Layers by HVPE

[16p-4C-6] Ga2O3 Schottky Barrier Diodes with Drift Layers Grown by HVPE

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga2O3 Schottky Barrier Diodes

[16p-4C-8] β-Ga2O3 Schottky Barrier Diode with Field Plate Edge Termination

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga2O3 (010) for Si-ion-implanted field effect transistors

Authentication

△ [16p-4C-2] Thinning of SiC Wafer by sub-atmospheric pressure plasma etching with SF₆

△ [16p-4C-4] Fabrication of diamond field effect transistor using NO₂ molecular doping

△ [16p-4C-5] Homoepitaxial Growth of Si-Doped Thick (001) β-Ga₂O₃ Layers by HVPE

[16p-4C-6] Ga₂O₃ Schottky Barrier Diodes with Drift Layers Grown by HVPE

△ [16p-4C-7] Temperature-Dependent Device Characteristics of HVPE-Grown Ga₂O₃ Schottky Barrier Diodes

[16p-4C-8] β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

▲ [16p-4C-9] Molecular beam epitaxy of undoped β-Ga₂O₃ (010) for Si-ion-implanted field effect transistors