Symposium

[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

Sun. Sep 13, 2015 1:15 PM - 6:30 PM 2M (224-1(South))

座長:杉山睦(東京理科大),米田稔(岡山理科大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[13p-2M-1] = Introductory Talk =
New approach to the next-generation device using multinary compounds
-- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

〇Mutsumi Sugiyama¹ (1.Tokyo Univ. of Science)

1:30 PM - 2:00 PM

[13p-2M-2] n-type oxide semiconductor/p-type Cu₂O heterojunction solar cells fabricated using
Cu₂O sheet prepared by controlling the resistivity

〇TOSHIHIRO MIYATA¹, YUKI NISHI¹, TADATSUGU MINAMI¹ (1.Kanazawa Inst.)

2:00 PM - 2:30 PM

[13p-2M-3] Progress of photovoltaic device based on III-V nitride film

〇Masatomo Sumiya¹, Sang Liwen^1,2 (1.NIMS, 2.JST-PRESTO)

2:30 PM - 2:45 PM

[13p-2M-4] Electronic structure of transparent p-type conductive BaCuSF, SrCuSeF, and SrCuSF thin films for polycrystalline thin-film tandem solar cells

〇(PC)Tsuyoshi Maeda¹, Toshiyuki Kawabe¹, Shuya Kitabayashi¹, Ako Yamamori¹, Mikihiko Nishitani^1,2, Hiroshi Sakakima¹, Takahiro Wada¹ (1.Ryukoku Univ., 2.Osaka Univ.)

2:45 PM - 3:15 PM

[13p-2M-5] Recent progress of thin film solar cells based on Cu₂SnS₃ and related materials

〇Hideaki Araki¹, Ayaka Kanai¹, Hinako Ebe¹, Kazuo Jimbo¹, Hironori Katagiri^1,2 (1.NIT Nagaoka, 2.JST-CREST)

3:15 PM - 3:30 PM

[13p-2M-6] CZTS photovoltaic cell with η=9.4% using post high temperature annealing after CdS buffer layer deposition

〇Shin Tajima¹, Mitsutaro Umehara¹, Takahiro Mise¹, Masaki Hasegawa¹, Tadayoshi Itoh¹ (1.Toyota CRDL)

3:30 PM - 3:45 PM

△ [13p-2M-7] Bandgap tuning of ZnSnP₂ through the order-disorder transition

〇(D)Shigeru NAKATSUKA¹, Yoshitaro NOSE¹, Yasuharu SHIRAI¹ (1.Kyoto Univ.)

Break （3:45 PM - 4:00 PM）

4:00 PM - 4:30 PM

[13p-2M-8] Possible Application of Charge Order Iron Compound for Solar Cell

〇Naoshi Ikeda¹, Kosuke Fujiwara¹, Tatsuo Fujii¹, Jun Kano¹ (1.Grad. Sch., Okayama Univ.)

4:30 PM - 5:00 PM

[13p-2M-9] Multiferroic heterostructures - Electric field control of magnetism and future prospect

〇Tomoyasu Taniyama¹ (1.Tokyo Tech.)

5:00 PM - 5:15 PM

[13p-2M-10] Growth of ferroelectric BiFeO₃ thin films on β-Ga₂O₃ single crystal substrates

〇(M2)tomoya komae¹, kenshi takada¹, takeshi yoshimura¹, norifumi fujimura¹ (1.Osaka Prefecture University)

5:15 PM - 5:30 PM

[13p-2M-11] Possibility of Piezochromic devices as an Event-memorizing Stress Sensor

〇Makoto Toriyama¹, Takashi Nakajima¹, Yoichiro Hashizume¹, Soichiro Okamura¹ (1.Tokyo Univ. of Sci.)

5:30 PM - 5:45 PM

[13p-2M-12] Thermoelectric properties of ternary intermetallic compounds containing Na in tunnel structures

〇Takahiro Yamada¹, Masahiro Kanno¹, Kamamoto Michitake¹, Hisanori Yamane¹, Nagai Hideaki² (1.IMRAM Tohoku Univ., 2.AIST)

5:45 PM - 6:15 PM

[13p-2M-13] Thermoelectric materials for practical devices and systems

〇Tsutomu Kanno¹, Hiromasa Tamaki¹, Hiroki Sato¹ (1.Panasonic Corp.)

6:15 PM - 6:30 PM

[13p-2M-14] New approach to the next-generation device using multinary compounds
-- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

〇Minoru Yoneta¹ (1.Okayama Univ. Sci.)

Sessions

Symposium » New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-1] = Introductory Talk =
New approach to the next-generation device using multinary compounds
-- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-2] n-type oxide semiconductor/p-type Cu₂O heterojunction solar cells fabricated using
Cu₂O sheet prepared by controlling the resistivity

[13p-2M-3] Progress of photovoltaic device based on III-V nitride film

[13p-2M-4] Electronic structure of transparent p-type conductive BaCuSF, SrCuSeF, and SrCuSF thin films for polycrystalline thin-film tandem solar cells

[13p-2M-5] Recent progress of thin film solar cells based on Cu₂SnS₃ and related materials

[13p-2M-6] CZTS photovoltaic cell with η=9.4% using post high temperature annealing after CdS buffer layer deposition

△ [13p-2M-7] Bandgap tuning of ZnSnP₂ through the order-disorder transition

[13p-2M-8] Possible Application of Charge Order Iron Compound for Solar Cell

[13p-2M-9] Multiferroic heterostructures - Electric field control of magnetism and future prospect

[13p-2M-10] Growth of ferroelectric BiFeO₃ thin films on β-Ga₂O₃ single crystal substrates

[13p-2M-11] Possibility of Piezochromic devices as an Event-memorizing Stress Sensor

[13p-2M-12] Thermoelectric properties of ternary intermetallic compounds containing Na in tunnel structures

[13p-2M-13] Thermoelectric materials for practical devices and systems

[13p-2M-14] New approach to the next-generation device using multinary compounds
-- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

Authentication

Sessions

Symposium » New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

[13p-2M-1~14] New approach to the next-generation device using multinary compounds -- novel fields of solar cells, thermoelectric materials, magnetic-dielectric materials --

△ [13p-2M-7] Bandgap tuning of ZnSnP2 through the order-disorder transition

Authentication

△ [13p-2M-7] Bandgap tuning of ZnSnP₂ through the order-disorder transition