09:30 〜 09:45
▼ [13a-1A-3] Current–voltage characteristic of Au/CdTe/In diodes after laser doping through the CdTe crystal
キーワード：CdTe semiconductor,Surface treatment
In this work, current-voltage characteristics of Au/CdTe/In after laser doping through the CdTe crystal has been studied. Semi-insulating p-like CdTe wafers were subjected to pulsed nanosecond laser irradiation by YAG:Nd laser (λ = 1064 nm, τ = 8 ns, f = 12 pulses/sec) with different energy densities and pulse numbers in order to develop the optimal parameters of laser irradiation for In doping and diode fabrication. Multiple irradiation of the CdTe-In interface through the CdTe changed forward-biased current and reverse one. The I-V characteristics depended on energy density of applied laser radiation and number of laser shots as well as on the thickness of the deposited In electrode film. The improving of electrical properties of the diodes after irradiation of the In/CdTe/Au structures from the CdTe crystal side can be observed from the shift of the forward branch of the I-V curve toward lower voltages and reduction of the leakage current in comparison with an unirradiated In/CdTe/Au structure. A low leakage current and a steep increase in the forward biased current were evidence of the creation of a high barrier p-n junction in the CdTe crystal near the CdTe-In interface. This was due to the formation of a heavily In-doped thin n-type CdTe layer adjoining to the CdTe-In interface as result of laser action on the In film.