The 76th JSAP Autumn Meeting, 2015

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13 Semiconductors » 13.4 Si wafer processing /MEMS/Integration technology

[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

Sun. Sep 13, 2015 9:00 AM - 11:45 AM 1C (135)

座長:河本 直哉(山口大),松尾 直人(兵庫県立大)

9:30 AM - 9:45 AM

[13a-1C-3] H2 Annealing Effect of SiO2 Film Deposited by RF Sputtering at Room Temperature

〇Kimihiko Imura1, Tatsuya Okada1, Hikaru Tamashiro1, Takashi Noguchi1 (1.Univ. of the Ryukyus)

Keywords:TFT