[13a-1C-1~10] 13.4 Si wafer processing /MEMS/Integration technology

[13a-1C-6] Suppression of Intra-grain Defects by Atmospheric Pressure Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Strips

〇Seiji Morisaki¹, Taichi Nakatani¹, Ryota Shin¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:Thin Film Transistor,Grain Growth,Thermal Plasma Jet

High speed lateral crystallization(HSLC) of amorphous silicon (a-Si) strips by micro-thermal-plasma-jet (µ-TPJ) irradiation is quite effective to suppress grain boundaries (GBs) except Σ3 coincidence site lattice (CSL). Intra-grain defects in strips were significantly reduced by suppressing the agglomeration of molten Si with low temperature condition by fast scanning speed (v). Thin film transistors (TFTs), using optimized HSLC condition by v = 1500 mm/s demonstrated extremely high performance with the field effect mobility (µ_FE) of 443 cm²/Vs.