The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13a-1D-1~11] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 8:45 AM - 11:45 AM 1D (141+142)

座長:平山 秀樹(理研),長谷川 繁彦(阪大)

11:00 AM - 11:15 AM

△ [13a-1D-9] Evaluation of m-plane GaN by using laser-induced THz emission

〇Yuji Sakai1, Iwao Kawayama1, Hidetoshi Nakanishi2, Masayoshi Tonouchi1 (1.ILE, Osaka Univ., 2.SCREEN Holdings Co., Ltd.)

Keywords:THz