[13a-2J-1~11] 10.1 新物質創成（酸化物・ホイスラー・金属磁性体等）

▼ [13a-2J-9] Electric field-effect on a Co ultra-thin film with a SrTiO₃ back-gate

〇(M2)Shingo Nakazawa¹, Aya Obinata², Daichi Chiba², Kazunori Ueno¹ (1.Dept. of Basic Science, The Univ. of Tokyo, 2.Dept. of Appl. Phys., The Univ. of Tokyo)

キーワード：Electric field effect on magnetism,Co ultra-thin film,SrTiO3

Electric field-effect on ferromagnetic metal attracts considerable attention for a new method of tuning magnetic properties and magnetization direction. Previous reports employed a top-gate configuration, on which dielectric or electrolyte layer is placed on a ferromagnetic layer . In this study, we propose a back-gate configuration with a SrTiO₃ single crystal substrate as a dielectric, which has a relative permittivity of 300 at room temperature and 20,000 at 2 K. Using back-gate configuration, we tuned ferromagnetic hysteresis loop on a Co ultra-thin film on SrTiO₃ substrate.