The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)

座長:渡邉 孝信(早大),右田 真司(産総研)

11:30 AM - 11:45 AM

[13a-4C-10] Structure analysis of ferroelectric Hf(Si)O by synchrotron XRD

〇Tsunehiro Ino1, Riichiro Takaishi1, Yasushi nakasaki1, Shosuke Fujii1, Daisuke Matsushita1 (1.Toshiba Corporation)

Keywords:ferroelectric,hafnium,Hf

We investigated the crystal structure of ferroelectric Hf(Si)O by in-plane XRD analysis. It was not the mixture state of the antiferroelectric P42/nmc phase and the paraelectric P21/c phase, but the main phase was the ferroelectric Pbc21 phase of a = 5.054 nm, b = 5.231 nm, c = 5.060 nm. Superlattice peak characterized by Pbca regarded as antiferroelectric was not obserbed. The C-V property of the sample was ferroelectric.