[13a-4C-1~12] 13.3 Insulator technology

[13a-4C-10] Structure analysis of ferroelectric Hf(Si)O by synchrotron XRD

〇Tsunehiro Ino¹, Riichiro Takaishi¹, Yasushi nakasaki¹, Shosuke Fujii¹, Daisuke Matsushita¹ (1.Toshiba Corporation)

Keywords:ferroelectric,hafnium,Hf

We investigated the crystal structure of ferroelectric Hf(Si)O by in-plane XRD analysis. It was not the mixture state of the antiferroelectric P4₂/nmc phase and the paraelectric P2₁/c phase, but the main phase was the ferroelectric Pbc2₁ phase of a = 5.054 nm, b = 5.231 nm, c = 5.060 nm. Superlattice peak characterized by Pbca regarded as antiferroelectric was not obserbed. The C-V property of the sample was ferroelectric.