[13a-4C-1~12] 13.3 Insulator technology

[13a-4C-12] Effects of top TiN deposition process on electrical and physical properties of ferroelectric HfSiO MIM capacitor

〇Yuichi Kamimuta¹, Shosuke Fujii¹, Riichiro Takaishi¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Masumi Saitoh¹, Masato Koyama¹ (1.Toshiba Corp.)

Keywords:ferroelectrics,HfO2