The 76th JSAP Autumn Meeting, 2015

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[13a-4C-1~12] 13.3 Insulator technology

Sun. Sep 13, 2015 9:00 AM - 12:15 PM 4C (432)

座長:渡邉 孝信(早大),右田 真司(産総研)

9:15 AM - 9:30 AM

[13a-4C-2] Electrical Characteristics of Plasma ALD SiO2 Films with Nitrogen Incorporation

〇Koudai Endo1, Yiming Lei1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Kazuo Tsutsui1, Hiroshi Iwai1 (1.Tokyo Tech.IGSSE)

Keywords:silicon oxynitride