[13p-1A-1~15] Trend of Functional Atomic Thin Film Application

[13p-1A-7] Transition Metal Dichalcogenides as a Channel Material for Ultra-Thin Body MOSFETs

〇Takahiro Mori¹, Naruki Ninomiya^1,2, Noriyuki Uchida¹, Toshitaka Kubo¹, Eiichiro Watanabe³, Daiju Tsuya³, Satoshi Moriyama³, Masatoshi Tanaka², Atsushi Ando¹ (1.AIST, 2.YNU, 3.NIMS)

Keywords:transition metal dichalcogenides,MOSFET

We review transistion metal dichalcogenides as a channel material for ultra-thin body MOSFETs and report our recent research progress on high-k/metal gate MoS₂ MOSFETs.