Si-doped AlN substrates prepared by HVPE and their application to vertical Schottky barrier diodes

REO YAMAMOTO

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤真(三菱化学),岡田成仁(山口大),岩谷素顕(名城大)

4:30 PM - 4:45 PM

[13p-1D-13] Si-doped AlN substrates prepared by HVPE and their application to vertical Schottky barrier diodes

〇REO YAMAMOTO^1,2, Toru Kinoshita¹, Toru Nagashima¹, Toshiyuki Obata¹, Shinya Takashima³, Rie Togashi², Yoshinao Kumagai², Raoul Schlesser⁴, Ramon Collazo⁵, Akinori Koukitu², Zlatko Sitar⁵ (1.Tokuyama Corporation, 2.Tokyo Univ. of Agri. and Tech., 3.Fuji Electric Co., Ltd., 4.Hexa Tech, Inc., 5.North Carolina State University)

Keywords:n-type AlN substrate