The 76th JSAP Autumn Meeting, 2015

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-1D-1~26] 15.4 III-V-group nitride crystals

Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)

座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)

1:30 PM - 1:45 PM

[13p-1D-2] High quality GaN bulk crystal growth by acidic ammonothermal method

〇MAKOTO SAITO1,2, Quanxi Bao1,3, Kohei Kurimoto1,3, Daisuke Tomida1, Kazunobu Kojima1, Yoshiki Yamazaki1, Yuji Kagamitani2, Rinzo Kayano3, Toru Ishiguro1, Shigefusa Chichibu1 (1.IMRAM Tohoku Univ., 2.Mitsubishi Chemical, 3.Japan Steel Works)

Keywords:ammonothermal,bulk,Gallium Nitride