7:15 PM - 7:30 PM
△ [13p-1D-23] Mechanism of Stress Control for GaN Growth on Si Using AlN Interlayers
Keywords:III-V Nitride Crystal,GaN Growth on Si,Stress Control
Presentation information
Oral presentation
15 Crystal Engineering » 15.4 III-V-group nitride crystals
[13p-1D-1~26] 15.4 III-V-group nitride crystals
Sun. Sep 13, 2015 1:15 PM - 8:15 PM 1D (141+142)
座長:斉藤 真(三菱化学),岡田 成仁(山口大),岩谷 素顕(名城大)